Reference : Physics of imaging p-n junctions by scanning tunneling microscopy and spectroscopy
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/10993/20586
Physics of imaging p-n junctions by scanning tunneling microscopy and spectroscopy
English
Jäger, N. D. [Institut fu¨r Festko¨rperforschung, Forschungszentrum Ju¨lich GmbH, 52425 Ju¨lich, Germany]
Marso, Michel mailto [Institut fu¨r Schichten und Grenzfla¨chen, Forschungszentrum Ju¨lich GmbH, 52425 Ju¨lich, Germany]
Salmeron, M. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720]
Weber, E. R. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, and Department of Materials Science, University of California, Berkeley, California 94720]
Urban, K. [Institut fu¨r Festko¨rperforschung, Forschungszentrum Ju¨lich GmbH, 52425 Ju¨lich, Germany]
Ebert, Ph [Institut fu¨r Festko¨rperforschung, Forschungszentrum Ju¨lich GmbH, 52425 Ju¨lich, Germany]
2003
Physical Review. B : Condensed Matter
American Institute of Physics
(2003)
165307
Yes (verified by ORBilu)
0163-1829
New York
NY
[en] Combined voltage-dependent scanning tunneling microscopy ~STM! images with atomic resolution, local scanning tunneling spectroscopy, and simulations of the potential distribution in the interface STM tip system are used to extract the physical imaging mechanisms of GaAs p-n interfaces in STM images. It is shown that ~i! the tip-induced changes of the potential near the interface result in the tunneling characteristics of the p-type (n-type! layer being dragged into the interfaces’ depletion region at positive ~negative! sample voltage. ~ii! This leads to a considerable reduction of the apparent width of the image of the depletion zone in STM images. ~iii! At small negative sample voltages, a pronounced depression line appears. The depression is directly correlated with the electronic interface. It arises from the interplay of competing current contributions from the valence and conduction bands. This understanding of the imaging process allows us to develop methods on how to extract accurate physical data about the properties of the electronic interfaces from scanning tunneling microscopy images.
http://hdl.handle.net/10993/20586
10.1103/PhysRevB.67.165307

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