Reference : Ultrafast and highly sensitive photodetectors fabricated on high-energy nitrogen-impl...
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20537
Ultrafast and highly sensitive photodetectors fabricated on high-energy nitrogen-implanted GaAs,
English
Mikulics, M. [Institute of Thin Films and Interfaces, Research Centre Ju¨lich, D-52425 Ju¨lich, Germany]
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Centre Ju¨lich, D-52425 Ju¨lich, Germany]
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Ju¨lich, D-52425 Ju¨lich, Germany]
Stancek [Department of Nuclear Physics and Technology, Slovak University of Technology, Bratislava, Slovakia]
Kovác [Department of Nuclear Physics and Technology, Slovak University of Technology, Bratislava, Slovakia]
Zheng, X. [Department of Electrical and Computer Engineering, and the Laboratory for Laser Energetics, University of Rochester, Rochester]
Wu, S. [Department of Electrical and Computer Engineering, and the Laboratory for Laser Energetics, University of Rochester, Rochester]
Sobolewski, R. [Department of Electrical and Computer Engineering, and the Laboratory for Laser Energetics, University of Rochester, Rochester]
2003
Applied Physics Letters
American Institute of Physics
83
1719-1721
Yes (verified by ORBilu)
0003-6951
Melville
NY
[en] We have fabricated and tested metal–semiconductor–metal ~MSM! photodetectors based on nitrogen-ion-implanted GaAs. Nitrogen ions with energy of 700 and 880 keV, respectively, were implanted into epitaxial GaAs films at an ion concentration of 331012 cm22. Ti/Au MSM photodetectors with 1-um-wide fingers were fabricated on top of the implanted GaAs. In comparison to low-temperature-grown GaAs photodetectors, produced in parallel in identical MSM geometry, the 880 keV N1-implanted photodetectors exhibited almost two orders of magnitude lower dark current ~10 nA at 1 V bias! and the responsivity more than doubled ~.20 mA/W at 20 V bias!. Illumination with 100-fs-wide, 810 nm wavelength laser pulses, generated ;2.5-ps-wide photoresponse signals with amplitudes as high as 2 V. The 2.5 ps relaxation time was the same for both the ion-implanted and low-temperature-grown devices and was limited by the MSM capacitance time constant.
http://hdl.handle.net/10993/20537

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