Reference : Influence of doping density on small and large signal characteristics of AlGaN/GaN/Si...
Scientific congresses, symposiums and conference proceedings : Paper published in a book
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20532
Influence of doping density on small and large signal characteristics of AlGaN/GaN/SiC HEMTs
English
Fox, A. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Marso, Michel mailto [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Bernát, J. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Javorka, P. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Kordoš, P. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
2004
Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04
147-150
No
0-7803-8535-7
5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04
2004
[en] The small signal S-parameter and load pull measurements on AlGaN/GaN HEMTs with different doping densities are reported. The cut-off frequencies ft and fmax of 38 and 67 GHz respectively, and the maximal output powers of 4.9 and 3.8 W/mm at 2 and 7 GHz respectively, were achieved. The parameter extraction from small signal S-parameters shows an increase of gate-source capacitance and transconductance with the doping concentration and hence its influence on small signal (ft and fmax) and power performance.
http://hdl.handle.net/10993/20532

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