Reference : A novel two-color photodetector based on an InAlAs-InGaAs HEMT layer structure
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20530
A novel two-color photodetector based on an InAlAs-InGaAs HEMT layer structure
English
Marso, Michel mailto [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Wolter, M. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Kordoš, P. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
2004
IEEE Photonics Technology Letters
Institute of Electrical and Electronics Engineers
16 (2004)
11
2541-2543
Yes
1041-1135
1941-0174
New York
NY
[en] Infrared detectors ; metal–semiconductor–metal (MSM) devices ; MODFETs ; photodetectors, spectroscopy
[en] The spectral responsivity of an InAlAs–InGaAs metal–semiconductor–metal diode above a two-dimensional electron gas (2DEG) is investigated as a function of the applied bias. At low voltages, only the InAlAs layer above the 2DEG contributes to the photocurrent, while the InGaAs channel layer is activated at higher bias. This results in a voltage-dependent spectral response of the photodetector. The ratio of the responsivities at 1300 and 850 nm changes from 0.03- at 1-V to 0.44- at 1.6-V bias. This property makes the device a candidate suitable to detect and to separate optical information originated both from the GaAs (850 nm) and in the InGaAs (1300, 1550 nm)-based optoelectronic technology.
http://hdl.handle.net/10993/20530
10.1109/LPT.2004.834909

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