Reference : GaN Nanocolumns on Si(111) Grown b Molecular Beam Epitaxy
Scientific congresses, symposiums and conference proceedings : Paper published in a book
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20528
GaN Nanocolumns on Si(111) Grown b Molecular Beam Epitaxy
English
Calarco, Raffaella [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Marso, Michel mailto [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Meijers, R. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Richter, T. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Aykanat, A. I. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Stoica, T. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany, and INCDFM, Magurele, POB Mg7, Bucharest, Romania]
Lüth, H. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
2004
Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04
9-12
No
0-7803-8535-7
5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04
2004
[en] GaN nanocolumns are reproducibly grown by plasma-assisted molecular beam epitaxy on Si(111). The nanocolumn density and diameter, 20–150 nm, are controlled by means of the III/V ratio. The nanocolumns grow parallel to the [111] direction of the Si substrate. The columns have been transferred to a Si(100) substrate covered with a layer of 300nm SiO2; single nanowire devices have been fabricated using finger shaped electrical contacts (Ti/Au) obtained by e-beam patterning technique. The electrical transport properties of the resulting metal–semiconductor–metal nanostructures are analyzed by means of current– voltage measurements with and without UV-illumination.
http://hdl.handle.net/10993/20528

File(s) associated to this reference

Fulltext file(s):

FileCommentaryVersionSizeAccess
Limited access
113_ASDAM04_2004_9_12.pdfPublisher postprint154.01 kBRequest a copy

Bookmark and Share SFX Query

All documents in ORBilu are protected by a user license.