Reference : Fabrication and performance of hybrid photoconductive devices based on freestanding L...
Scientific congresses, symposiums and conference proceedings : Paper published in a journal
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20527
Fabrication and performance of hybrid photoconductive devices based on freestanding LT-GaAs, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII,
English
Adam, R. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Mikulics, M. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany, and Max-Planck-Institute for Radioastronomy, D-53121 Bonn, Germany]
Wu, S. [> >]
Zheng, X. [> >]
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Camara, I. [Max-Planck-Institute for Radioastronomy, D-53121 Bonn, Germany]
Siebel, F. [Max-Planck-Institute for Radioastronomy, D-53121 Bonn, Germany]
Güsten, R. [Max-Planck-Institute for Radioastronomy, D-53121 Bonn, Germany]
Förster, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Sobolewski, R. [Department of Electrical and Computer Engineering, and the Laboratory for Laser Energetics, University of Rochester, Rochester]
2004
Proceedings of SPIE
International Society for Optical Engineering
5353 (2004)
321-332
No
0277-786X
1996-756X
Bellingham
WA
SPIE
2004
[en] low-temperature-grown GaAs ; photoconductive switch ; femtosecond carrier dynamics ; optoelectronics ; electro-optic sampling ; photomixing
[en] We report on fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs (LT-GaAs). In our experiments, the LT-GaAs/AlAs bilayers were grown on 2-inch diameter, semi-insulating GaAs wafers by a molecular beam epitaxy. Next, the bilayer was patterned to form 10 × 10 μm2 to 150 × 150 μm2 structures using photolithography and ion beam etching. The AlAs layer was then selectively etched in diluted HF solution, and the LT-GaAs device was lifted from its substrate and transferred on top of a variety of substrates including Si, MgO/YBaCuO, Al2O3, and a plastic foil. Following the transfer, metallic coplanar transmission lines were fabricated on top of the LT-GaAs structure, forming a metal semiconductor-metal photodetectors or photomixer structures. Our freestanding devices exhibited above 200 V breakdown voltages and dark currents at 100 V below 3×10-7 A. Device photoresponse was measured using an electro-optic sampling technique with 100-fs-wide laser pulses at wavelengths of 810 nm and 405 nm as the excitation source. For 810-nm excitation, we measured 0.55 ps-wide electrical transients with voltage amplitudes of up to 1.3 V. The signal amplitude was a linear function of the applied voltage bias, as well as a linear function of the laser excitation power, below well-defined saturation thresholds. Output power from the freestanding photomixers was measured with two beam laser illumination experimental setup. Reported fabrication technique is suitable for the LT-GaAs integration with a range of semiconducting, superconducting, and organic materials for high-frequency hybrid optoelectronic applications.
http://hdl.handle.net/10993/20527

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