Reference : Impact of layer structure on performance of unpassivated AlGaN/GaN/SiC HEMTs,
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20496
Impact of layer structure on performance of unpassivated AlGaN/GaN/SiC HEMTs,
English
Bernát, J. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Wolter, M. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Fox, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Flynn, J. [ATMI Corporate, 7 Commerce Drive, Danbury, Connecticut 06810, USA]
Brandes, G. [ATMI Corporate, 7 Commerce Drive, Danbury, Connecticut 06810, USA]
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
2004
Electronics Letters
Institution of Engineering and Technology
40
1
78-80
Yes (verified by ORBilu)
0013-5194
[en] The performance of unpassivated AlGaN=GaN=SiC HEMTs prepared on different MOVPE grown layer structures is reported. An overall improvement of device characteristics using doped structures in comparison to undoped counterpart is observed. This can be demonstrated by IDS of 0.86 and 1.33 A=mm, gm of 220 and 273 mS=mm, fT of 33 and 43 GHz and fmax of 54 and 61 GHz for 0.3 mm gate length devices on undoped and doped structures, respectively. The DC=pulsed I–V characteristics as well as power measurements show insignificant RF dispersion of HEMTs on doped structures. These results underline the advantage of doped layer structures for preparation of high-performance AlGaN=GaN HEMTs.
http://hdl.handle.net/10993/20496
10.1049/el:20040021

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