Reference : Influence of layer structure on performance of AlGaN/GaN High Electron Mobility Trans...
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20483
Influence of layer structure on performance of AlGaN/GaN High Electron Mobility Transistors before and after passivation
English
Bernát, J. [Institute of Thin Films and Interfaces (ISG-1), Research Centre Jülich]
Javorka, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Fox, A. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
Kordoš, P. [Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany]
2004
Journal of Electronic Materials
Springer Boston
33
(2004)
436-439
Yes (verified by ORBilu)
0361-5235
http://hdl.handle.net/10993/20483
10.1007/s11664-004-0198-3
http://www.springerlink.com/content/120165360732r626/

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