Reference : Influence of passivation-induced stress on the performance of AlGaN/GaN HEMTs
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20480
Influence of passivation-induced stress on the performance of AlGaN/GaN HEMTs
English
Gregusova, Dagmar [Institute of Electrical Engineering, Academy of Sciences, 84104 Bratislava, Slovakia]
Bernát, J. [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
Drzik, M. [International Laser Center, 81219 Bratislava, Slovakia]
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany]
Novak, J. [Institute of Electrical Engineering, Academy of Sciences, 84104 Bratislava, Slovakia]
Kordoš, P. [Institute of Electrical Engineering, Academy of Sciences, 84104 Bratislava, Slovakia, and Institute of Microelectronics, Slovak Technical University, 81219 Bratislava, Slovakia]
Uherek, F. [International Laser Center, 81219 Bratislava, Slovakia]
2005
Physica Status Solidi C. Current Topics in Solid State Physics
Wiley-VCH Verlag
2
7
2619-2622
Yes (verified by ORBilu)
1862-6351
1610-1634
Weinheim
Germany
[en] This paper reports on properties of intentionally undoped AlGaN/GaN/sapphire-based high electron mobility transistors (HEMTs) before and after passivation with SiO2 and Si3N4. Our results indicate that the DC performance of the AlGaN/GaN HEMTs improved significantly as the stress in the passivation layer increased from compressive to tensile. It corresponded to changes in the sheet carrier concentration. Unlike the DC properties, RF properties of the HEMTs were less sensitive to the stress.
http://hdl.handle.net/10993/20480
10.1002/pssc.200461350

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