Reference : Wedge-shaped layers from porous silicon: the basics of laterally graded interference ...
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20462
Wedge-shaped layers from porous silicon: the basics of laterally graded interference filters
English
Bohn, H. G. [Institut für Schichten und Grenzflächen, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
Marso, Michel mailto [Institut für Schichten und Grenzflächen, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany]
2005
Physica Status Solidi A. Applied Research
Wiley-VCH, Berlin, ALLEMAGNE
202
8
1437-1442
Yes (verified by ORBilu)
0031-8965
1521-396X
[en] The process of making laterally graded interference filters has been reanalyzed. A simple and consistent picture arises if one applies a constant electric field perpendicular to the etch current instead of a constant current. The system is quantitatively modeled by means of a pure ohmic equivalent circuit model.
http://hdl.handle.net/10993/20462
10.1002/pssa.200461126

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