Reference : Photomixers fabricated on nitrogen-ion-implanted GaAs
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20460
Photomixers fabricated on nitrogen-ion-implanted GaAs
English
Mikulics, M. [Max-Planck-Institute for Radioastronomy, Bonn, D-53121 Bonn, Germany, and Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany]
Marso, Michel mailto [Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany]
Cámara Mayorga, I. [Max-Planck-Institute for Radioastronomy, Bonn, D-53121 Bonn, Germany]
Güsten, R. [Max-Planck-Institute for Radioastronomy, Bonn, D-53121 Bonn, Germany]
Stanček, S. [Department of Nuclear Physics and Technology, Slovak University of Technology, Bratislava, Slovakia]
Kováč, P. [Department of Nuclear Physics and Technology, Slovak University of Technology, Bratislava, Slovakia]
Wu, S. [Department of Electrical and Computer Engineering and the Laboratory for Laser Energetics, University of Rochester, Rochester New York 14627-0231]
Khafizov, M. [Department of Electrical and Computer Engineering and the Laboratory for Laser Energetics, University of Rochester, Rochester New York 14627-0231]
Sobolewski, R. [Department of Electrical and Computer Engineering and the Laboratory for Laser Energetics, University of Rochester, Rochester New York 14627-0231]
Michael, E. A. [> >]
Schieder, R. [> >]
Wolter, M. [Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany]
Buca, D. [Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany]
Förster, A. [Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany]
Kordoš, P. [Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany]
Lüth, H. [Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany]
Li, Xia [Department of Electrical and Computer Engineering and the Laboratory for Laser Energetics, University of Rochester, Rochester New York 14627-0231]
2005
Applied Physics Letters
American Institute of Physics
87
4
41106-1-3
Yes (verified by ORBilu)
0003-6951
Melville
NY
[en] We report on fabrication and measurement of photomixers based on nitrogen-ion-implanted GaAs. We used energies of 500 keV, 700 keV, and 880 keV to implant N+ ions into GaAs substrates with an ion concentration of 3 1012 cm−2. The resulting material exhibited 110 fs carrier lifetime due to implantation-induced defects. Our photomixers were fabricated as metal-semiconductor-metal devices, placed at the feed point of a broadband antenna. Optoelectronic measurements were performed in the wavelength range between 350 nm and 950 nm. In comparison to their counterparts photomixers fabricated on low-temperature-grown GaAs the N+-implanted GaAs photomixers exhibit improvements on both the output power and responsivity. A maximal responsivity of above 100 mA/W was achieved and we did not observe any dependence of the mixer cut-off frequency on the bias voltage. These characteristics make N+-implanted GaAs the material of choice for efficient optoelectronic photomixers.
http://hdl.handle.net/10993/20460
10.1063/1.2006983

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