Reference : Growth and properties of GaN and AlN layers on silver substrates
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20458
Growth and properties of GaN and AlN layers on silver substrates
English
Mikulics, Martin [Max-Planck-Institute for Radioastronomy, Bonn, D-53121 Bonn, Germany, and Institute of Thin Films and Interfaces, Research Center Jülich, D-52425 Jülich, Germany, and Institut für Hochfrequenztechnik, Technische Universität Braunschweig, Schleinitzstraße 22, D-38106 Braunschweig, Germany]
Kočan, Martin [IV. Physikalisches Institut, Georg-August Universität Göttingen, D-37077 Göttingen, Germany]
Rizzi, Angela [IV. Physikalisches Institut, Georg-August Universität Göttingen, D-37077 Göttingen, Germany]
Javorka, Peter [AMD, Wilschdorfer Landstrasse 101, 01109 Dresden, Germany]
Sofer, Zdenĕk [Department of Inorganic Chemistry, Institute of Chemical Technology, Technicka 5, Prague 6, Czech Republic]
Stejskal, Josef [Department of Inorganic Chemistry, Institute of Chemical Technology, Technicka 5, Prague 6, Czech Republic]
Marso, Michel mailto [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Kordoš, Peter [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Lüth, Hans [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
2005
Applied Physics Letters
American Institute of Physics
87
212109
Yes (verified by ORBilu)
0003-6951
Melville
NY
[en] We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with high preferential GaN 11-22 orientation. An intermetallic phase of Ga3Ag is found at the GaN/Ag interface. On the other hand, AlN layers exhibit a monocrystalline structure with a growth direction of 0002 . Schottky diodes prepared on GaN layers show good rectifying behavior and relatively low leakage current 10−3 A/cm2 . These results indicate that the III-nitride growth on metallic substrates might be used for low-cost and large-area electronic and photonic devices.
http://hdl.handle.net/10993/20458
10.1063/1.2135879

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