Reference : Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20457
Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN
English
Mikulics, M. [Institute of Thin Films and Interfaces and cni, Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich,]
Marso, Michel mailto [Institute of Thin Films and Interfaces and cni, Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich,]
Javorka, P. [Institute of Thin Films and Interfaces and cni, Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich,]
Kordoš, P. [Institute of Thin Films and Interfaces and cni, Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich,]
Lüth, H. [Institute of Thin Films and Interfaces and cni, Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich]
Kočan, M. [IV. Physikalisches Institut, Georg-August Universität Göttingen, D-37077 Göttingen, Germany]
Rizzi, A. [IV. Physikalisches Institut, Georg-August Universität Göttingen, D-37077 Göttingen, Germany]
Wu, S. [Department of Electrical and Computer Engineering, and the Laboratory for Laser Energetics, University of Rochester, Rochester]
Sobolewski, R. [Department of Electrical and Computer Engineering, and the Laboratory for Laser Energetics, University of Rochester, Rochester]
2005
Applied Physics Letters
American Institute of Physics
86
21
211110
Yes (verified by ORBilu)
0003-6951
[en] We have fabricated and characterized ultrafast metal-semiconductor-metal photodetectors based on low-temperature-grown sLTd GaN. The photodetector devices exhibit up to 200 kV/cm electric breakdown fields and subpicosecond carrier lifetime. We recorded as short as 1.4-ps-wide electrical transients using 360-nm-wavelength and 100-fs-duration laser pulses, that is corresponding to the carrier lifetime of 720 fs in our LT GaN material.
http://hdl.handle.net/10993/20457
10.1063/1.1938004
http://adsabs.harvard.edu/abs/2005ApPhL..86u1110M

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