Reference : High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect tran...
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20456
High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors
English
Kordoš, P. [Institute of Electrical Engineering, Slovak Academy of Sciences and Department of Microelectronics, Slovak Technical University,]
Heidelberger, G. [Institute of Thin Films and Interfaces and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich]
Bernát, J. [Institute of Thin Films and Interfaces and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich]
Fox, A. [Institute of Thin Films and Interfaces and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich]
Marso, Michel mailto [Institute of Thin Films and Interfaces and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich,]
Lüth, H. [Institute of Thin Films and Interfaces and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich]
2005
Applied Physics Letters
American Institute of Physics, NY
87
14
143501-143504
Yes (verified by ORBilu)
0003-6951
[en] We report on SiO2 /AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors MOSHFETs , which exhibit a 6.7 W/mm power density at 7 GHz. Unpassivated and SiO2-passivated heterostructure field-effect transistors HFETs were also investigated for comparison. Deposited 12 nm thick SiO2 yielded an increase of the sheet carrier density from 7.6 .10^12 to 9.2 .10^12 cm−2 and a subsequent increase of the static drain saturation current from 0.75 to 1.09 A/mm. The small-signal rf characterization of the MOSHFETs showed an extrinsic current gain cutoff frequency fT of 24 GHz and a maximum frequency of oscillation fmax of 40 GHz. The output power of 6.7 W/mm of the MOSHFETs measured at 7 GHz is about two times larger than that of HFETs. The results obtained demonstrate the suitability of GaN-based MOSHFETs for high-power electronics.
http://hdl.handle.net/10993/20456
10.1063/1.2058206
http://adsabs.harvard.edu/abs/2005ApPhL..87n3501K

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