Reference : GaAs photodetectors prepared by high-energy and high-dose nitrogen implantation
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20422
GaAs photodetectors prepared by high-energy and high-dose nitrogen implantation
English
Mikulics, Martin [Institute of Bio- and Nanosystems, Research Centre Jülich, D-52425 Jülich, Germany, and Institut für Hochfrequenztechnik, Technische Universität Braunschweig, Schleinitzstraße 22, D-38106 Braunschweig, Germany]
Marso, Michel mailto [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Mantl, Siegfried [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Lüth, Hans [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Kordoš, Peter [Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovak Republic, and Institute of Microelectronics, Slovak University of Technology, SK-81219 Bratislava, Slovak Republic]
2006
Applied Physics Letters
American Institute of Physics
89
Yes (verified by ORBilu)
International
0003-6951
Melville
NY
[en] The authors report on the fabrication and characterization of photodetectors based on nitrogen-ion-implanted GaAs and the annealing dynamics in these devices. An energy of 400 keV was used to implant N ions in a GaAs substrate at an ion concentration of 1 1016 cm−2. Dark current measurements as well as measurements under illumination show that the material properties rapidly change during the annealing process. Photodetectors based on nitrogen-implanted GaAs materials with annealing temperatures up to 400 °C exhibit a subpicosecond carrier lifetime up to 0.6 ps. These properties make nitrogen-ion-implanted GaAs an ideal material for ultrafast photodetectors, as alternative to low-temperature-grown GaAs.
http://hdl.handle.net/10993/20422
10.1063/1.2339907

File(s) associated to this reference

Fulltext file(s):

FileCommentaryVersionSizeAccess
Limited access
144_APL_89_2006_091103.pdfPublisher postprint70.55 kBRequest a copy

Bookmark and Share SFX Query

All documents in ORBilu are protected by a user license.