Reference : Origin of Improved RF Performance of AlGaN/GaN MOSHFETs Compared to HFETs,
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20409
Origin of Improved RF Performance of AlGaN/GaN MOSHFETs Compared to HFETs,
English
Marso, Michel mailto [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Heidelberger, Gero [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Indlekofer, Klaus Michael [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Bernát, Juraj [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Fox, Alfred [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Kordoš, P. [Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovak Republic]
Lüth, Hans [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
2006
IEEE Transactions on Electron Devices
Institute of Electrical and Electronics Engineers, New York
53
7
1517-1723
Yes (verified by ORBilu)
0018-9383
[en] Dielectric films ; gallium nitride ; metal–insulator–semiconductor (MIS) devices ; mobility ; modulation-doped fieldeffect transistors (MODFETs)
[en] In this paper, the influence of a 10-nm-thick silicondioxide layer, as a passivation or as a gate insulation, on the performance of heterojunction field-effect transistors (HFETs) and metal–oxide–semiconductor HFETs (MOSHFETs), based on an undoped AlGaN/GaN heterostructure on a SiC substrate, was investigated. Channel-conductivity results yield a nearly 50% increase of mobility in the MOSHFET samples compared to the unpassivated HFETs. This increase of the transport properties of the MOSHFET channel is confirmed by a similar 45% increase of the cutoff frequency, from 16.5 to 24 GHz. Hall measurements, however, show a 10% decrease of the mobility in the heterostructure with a SiO2 top layer. In this paper, the superior performance of the MOSHFET transistor, in contradiction to the Hall results, is attributed to the screening of the Coulomb scattering of the charged surface defects by the gate-metallization layer.
http://hdl.handle.net/10993/20409
10.1109/TED.2006.875819
http://cat.inist.fr/?aModele=afficheN&cpsidt=17887028

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