Reference : An AlGaN/GaN two-color photodetector based on AlGaN/GaN/SiC HEMT layer structure
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20408
An AlGaN/GaN two-color photodetector based on AlGaN/GaN/SiC HEMT layer structure
English
Marso, Michel mailto [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Fox, A. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Heidelberger, G. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Bernát, J. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Lüth, H. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
2006
Physica Status Solidi C. Current Topics in Solid State Physics
WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
3
6
2261-2264
Yes (verified by ORBilu)
1862-6351
1610-1634
[en] The optoelectronic properties of MSM diodes that are based on an AlGaN/GaN HEMT layer system are investigated as function of the applied bias. For low voltages, the two-dimensional electron gas acts as a barrier for the depletion layer. Therefore, only the upper AlGaN barrier layer contributes to the photocurrent. In the high voltage regime the depletion region penetrates the GaN buffer that adds the spectral responsivity of GaN to the pure AlGaN behaviour in the low voltage regime. The ratio of the responsivities at 350 nm and 300 nm wavelength can be switched from 0.01 at 2.5 V to 0.8 at 4 V bias. This property makes the MSM-2DEG a candidate for use as two-color photodetector. Device fabrication uses standard HEMT processing steps, allowing integration in HEMT circuits without the need of sophisticated growth or etching techniques.
http://hdl.handle.net/10993/20408
10.1002/pssc.200565127
http://www3.interscience.wiley.com/journal/112632050/abstract?CRETRY=1&SRETRY=0

File(s) associated to this reference

Fulltext file(s):

FileCommentaryVersionSizeAccess
Limited access
140_pss_c_3_2006_2261-2264.pdfPublisher postprint674.98 kBRequest a copy

Bookmark and Share SFX Query

All documents in ORBilu are protected by a user license.