Reference : GaN-nanowhiskers: MBE-growth conditions and optical properties
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20407
GaN-nanowhiskers: MBE-growth conditions and optical properties
English
Meijers, R. [Institute of Thin Films and Interfaces (ISG1) and cni-Center of Nanoelectronic Systems for Information Technology, Research Centre Julich]
Richter, T. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Calarco, R. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Stoica, T. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Bochem, H.-P. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Marso, Michel mailto [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Lüth, H. [Institute of Thin Films and Interfaces (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
2006
Journal of Crystal Growth
Elsevier, Amsterdam, PAYS-BAS
289
1
381-386
Yes (verified by ORBilu)
0022-0248
[en] Morphology and optical properties of GaN nanowhiskers grown by molecular beam epitaxy(MBE) have been studied in correlation with growth parameters. It was shown that the growth parameters can be tuned such that uniform, well separated and high-quality nanowhiskers are obtained. Using an optimized ramp of Ga beam equivalent pressure (BEP) during the growth, the tapering or coalescence of nanowhiskers can be suppressed. By increasing the growth temperature the density of nanowhiskers is reduced, but the crystalline quality is improved as can be concluded from cathodoluminescence (CL) results.
http://hdl.handle.net/10993/20407
10.1016/j.jcrysgro.2005.11.117

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