Reference : Traveling-wave photomixer with recessed interdigitated contacts on low-temperature-gr...
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20372
Traveling-wave photomixer with recessed interdigitated contacts on low-temperature-grown GaAs
English
Mikulics, M. [Max-Planck-Institute for Radioastronomy, Bonn, D-53121 Bonn, Germany, and Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany, and Institut für Hochfrequenztechnik, Technische Universität Braunschweig, Schleinitzstraße 22, D-38106 Braunschweig, Germany]
Michael, E. A. [Physics Institute, University of Cologne, Zülpicher Str. 77, 50937 Köln, Germany]
Schieder, R. [Physics Institute, University of Cologne, Zülpicher Str. 77, 50937 Köln, Germany]
Stutzki, J. [Physics Institute, University of Cologne, Zülpicher Str. 77, 50937 Köln, Germany]
Güsten, R. [Max-Planck-Institute for Radioastronomy, Bonn, D-53121 Bonn, Germany]
Marso, Michel mailto [Institute of Thin Films and Interfaces and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
van der Hart, A. [Institute of Thin Films and Interfaces and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Bochem, H. P. [Institute of Thin Films and Interfaces and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Lüth, H. [Institute of Thin Films and Interfaces and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Kordoš, P. [Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovak Republic, and Institute of Microelectronics, Slovak University of Technology, SK-81219 Bratislava, Slovak Republic]
2006
Applied Physics Letters
American Institute of Physics, Melville, NY
88
4
041118.1-041118.3
Yes (verified by ORBilu)
0003-6951
[en] We have fabricated and characterized novel traveling-wave photomixers with recessed interdigitated metal-semiconductor-metal MSM contacts based on low-temperature-grown GaAs. The new recessed MSM geometry led to an improved electric-field distribution inside the photomixer structure and resulted in an up-to-100% increase in the output power of continuously operated devices, compared to conventional MSM devices with standard surface electrodes fabricated on an identical material. The recessed electrode structure also resulted in lower saturation of output power at higher input powers, enabling it to take advantage of higher input powers.
http://hdl.handle.net/10993/20372
10.1063/1.2168250
http://apl.aip.org/apl

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