Reference : GaN and InN nanowires grown by MBE: A comparison
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20274
GaN and InN nanowires grown by MBE: A comparison
English
Calarco, Raffaella [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Marso, Michel mailto [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
2007
Applied Physics A : Materials Science & Processing
Springer Science & Business Media B.V.
499-503
Yes (verified by ORBilu)
0947-8396
New York
NY
[en] Morphological, optical and transport properties of GaN and InN nanowires grown by molecular beam epitaxy (MBE) have been studied. The differences between the two materials in respect to growth parameters and optimization procedure was stressed. The nanowires crystalline quality has been investigated by means of their optical properties. A comparison of the transport characteristics was given. For each material a band schema was shown, which takes into account transport and optical features and is based on Fermi level pinning at the surface.
http://hdl.handle.net/10993/20274

File(s) associated to this reference

Fulltext file(s):

FileCommentaryVersionSizeAccess
Limited access
152_APA_87_2007_499_503.pdfPublisher postprint357.37 kBRequest a copy

Bookmark and Share SFX Query

All documents in ORBilu are protected by a user license.