Reference : New approaches for growth control of GaN-based HEMT structure
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20272
New approaches for growth control of GaN-based HEMT structure
English
Hardtdegen, H. [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Steins, R. [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Kaluza, N. [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Cho, Y. S. [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Wirtz, K. [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
von der Ahe, M. [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Bay, H. L. [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Heidelberger, G. [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Marso, Michel mailto [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
2007
Applied Physics A : Materials Science & Processing
SPRINGER
87
3
491-498
Yes (verified by ORBilu)
0947-8396
[en] This paper reports on new approaches for growth control of GaN-based heterostructures for high frequency and high power application. First in situ methods are presented and their further development discussed [1]. The development leads to a greatly improved observation of growth parameter influences in the MOVPE of GaN. A new growth process is introduced which enhances growth reproducibility [2]. This new growth process is then optimized with respect to the envisaged application. To this end process modeling will be employed. The application envisaged is the AlxGa1−xN/GaNhigh electron mobility transistor (HEMT). At last device results will be presented. All in all it will be shown how fundamental research can drive technology and how basic knowledge can be employed forprocess development with respect to device applications.
http://hdl.handle.net/10993/20272
10.1007/s00339-007-3933-9
http://www.springerlink.com/content/q6j0583j41550308/

File(s) associated to this reference

Fulltext file(s):

FileCommentaryVersionSizeAccess
Limited access
151_APA_87_2007_491_498.pdfPublisher postprint1.02 MBRequest a copy

Bookmark and Share SFX Query

All documents in ORBilu are protected by a user license.