Reference : Doping Concentration of GaN Nanowires Determined by Opto-Electrical Measurements
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/20269
Doping Concentration of GaN Nanowires Determined by Opto-Electrical Measurements
English
Richter, T. [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Lüth, H. [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Meijers, R. [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Calarco, Raffaella [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
Marso, Michel mailto [Institute of Bio- and Nanosystems (IBN1) and cni—Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, 52425 Jülich, Germany]
2008
Nano Letters
American Chemical Society
8
9
3056-3059
Yes (verified by ORBilu)
1530-6984
1530-6992
Washington
DC
[en] The influence of n-doping on the electrical transport properties of GaN nanowires is investigated by photoconductivity measurements on wires with different diameters. The electrical transport in nanowires is extremely sensitive to the wire diameter because of the size dependent barrier for surface recombination. This effect is used to determine the doping level of the nanowires and to complete and consolidate our previously developed surface recombination model for GaN nanowires.
http://hdl.handle.net/10993/20269

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