Reference : Nanoscale investigations of the electronic surface properties of Cu(In,Ga)Se$_2$ thin...
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/10993/20088
Nanoscale investigations of the electronic surface properties of Cu(In,Ga)Se$_2$ thin films by scanning tunneling spectroscopy
English
Mönig, H. [> >]
Caballero, R. [> >]
Kaufmann, C. A. [> >]
Schmidt, Thomas mailto [Yale University > Department of Physics]
Lux-Steiner, M. Ch [> >]
Sadewasser, S. [> >]
2011
Solar Energy Materials and Solar Cells
95
1537
Yes (verified by ORBilu)
0927-0248
[en] Cu(In ; Ga)Se2
[en] In this work we investigate the electronic surface properties of polycrystalline Cu(In,Ga)Se$_2$ thin films by locally resolved scanning tunneling spectroscopy (STS). From current imaging tunneling spectroscopy (CITS) maps of an area of we observe distinct granular inhomogeneities, where current-voltage ($I(U)$) spectra differ from grain to grain and vary between metallic and semiconducting characteristics. Due to the high density of defect states at the Cu(In,Ga)Se$_2$ surface, the metallic $I(U)$ characteristics is not surprising. In the case of the semiconducting $I(U)$ characteristics, we suggest a preferential oxidation of particular grains, which passivates defect levels at the surface. This is supported by the presence of gallium and indium oxides detected by global X-ray photoelectron spectroscopy. Furthermore, we recorded $I(U)$ spectra from different grains under supra band gap laser illumination, which always show semiconducting characteristics. This behavior can be explained by a saturated occupation of defect states by photoexcited charge carriers. By evaluating differential conductance $(dI/dU)$ spectra under illumination from various grains, we estimate the average surface band gap to and compare the valence band onset with results from macroscopic ultraviolet photoelectron spectroscopy. The high lateral resolution of our CITS data allows also to study electronic properties at grain boundaries, which are discussed with regard to a recent STS study on a non-oxidized sample.
http://hdl.handle.net/10993/20088
10.1016/j.solmat.2010.11.027
http://www.sciencedirect.com/science/article/B6V51-51S6FS8-1/2/256b25df6e0f59456e96c5e9b70c88cc

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