Reference : Interfaces between nonpolar and semipolar III-nitride semiconductor orientations: Str...
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/10993/18685
Interfaces between nonpolar and semipolar III-nitride semiconductor orientations: Structure and defects
English
Kioseoglou, Joseph [Aristotle University of Thessaloniki > Department of Physics]
Lotsari, Antiopi [Aristotle University of Thessaloniki > Department of Physics]
Kalesaki, Efterpi mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Dimitrakopulos, George [Aristotle University of Thessaloniki > Department of Physics]
6-Feb-2012
Journal of Applied Physics
American Institute of Physics
111
033507
Yes (verified by ORBilu)
International
0021-8979
Melville
NY
[en] Observations of easy transition between nonpolar and semipolar orientations during III-Nitride
heteroepitaxy identify the 90o <-12-10> rotation relationship as being very important in defining this coexistence. A rigorous analysis of this relationship using the topological theory of interfaces showed that it leads to a high order of coincident symmetry and makes energetically favorable the appearance of the intergranular boundaries. Principal low-energy boundaries, that could also be technologically exploited, have been identified by high-resolution transmission electron microscopy (HRTEM) observations and have been studied energetically using empirical potential calculations. It is also shown that these boundaries can change their average orientation by incorporating disconnections. The pertinent strain relaxation mechanisms can cause such boundaries to act as sources of threading dislocations and stacking faults. The energetically favorable (10-10) // (0001) boundary was frequently observed to delimit m-plane crystallites in (-12-12) semipolar growth.
Aristotle University of Thessaloniki
European Commission - EC
Researchers ; Professionals ; Students ; General public ; Others
http://hdl.handle.net/10993/18685
10.1063/1.3680876
http://scitation.aip.org/content/aip/journal/jap/111/3/10.1063/1.3680876
FP7 ; 224212 - DOTSENSE - Group III-nitride quantum dots as optical transducers for chemical sensors

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