Reference : Screw threading dislocations in AlN: Structural and electronic properties of In and O...
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/10993/18684
Screw threading dislocations in AlN: Structural and electronic properties of In and O doped material
English
Kioseoglou, Joseph [Department of Physics, Aristotle University of Thessaloniki]
Kalesaki, Efterpi mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Belabbas, Imad [Chemistry Department, Abderahmane Mira University, Algeria]
Chen, Jun [Laboratoire de Recherche sur les Proprietes des Materiaux Nouveaux, Universite de Caen]
Nouet, Gerard [Centre de Recherche sur les Ions, les Materiaux et la Photonique, UMR CNRS 6252, ENSICAEN]
Kirmse, Holm [Institut fur Physik, Humboldt-Universitat zu Berlin, AG Kristallographie]
Neumann, Wolfgang [Institut fur Physik, Humboldt-Universitat zu Berlin, AG Kristallographie]
Komninou, Philomela [Department of Physics, Aristotle University of Thessaloniki]
Karakostas, Theodoros [Department of Physics, Aristotle University of Thessaloniki]
15-Sep-2011
Journal of Applied Physics
American Institute of Physics
110
053715
Yes (verified by ORBilu)
International
0021-8979
Melville
NY
[en] Density functional theory calculations were performed on undoped AlN screw threading dislocations (TDs) as well as TDs doped by indium and oxygen, prompted by integrated experiments through transmission electron microscopy and spectroscopic techniques demonstrating enhanced In and O concentrations in screw dislocation cores. It is revealed that screw TDs act as conduction pathways to charge carriers, introducing multiple levels in the bandgap due to overstrained, dangling, and “wrong” bonds formed even in the undoped cores. The presence of impurities and especially metallic In elevates the metal-like electronic structure of the distorted material and promotes the conductivity along the dislocation line. Hence screw dislocations in AlN are established as highly prominent conductive nanowires in semiconducting thin films and prospects for novel, highly functional nano-device materials through exploitation of screw TDs are attested.
Aristotle University of Thessaloniki
European Commission - EC
DOTSENSE - PARSEM (MRTN-CT-2004-005583)
Researchers ; Professionals ; Students ; General public ; Others
http://hdl.handle.net/10993/18684
10.1063/1.3632985
http://scitation.aip.org/content/aip/journal/jap/110/5/10.1063/1.3632985
FP7 ; 224212 - DOTSENSE - Group III-nitride quantum dots as optical transducers for chemical sensors

File(s) associated to this reference

Fulltext file(s):

FileCommentaryVersionSizeAccess
Limited access
JAP110_053715_2011.pdfPublisher postprint3.43 MBRequest a copy

Bookmark and Share SFX Query

All documents in ORBilu are protected by a user license.