Reference : Electronic structure of 1/6⟨20-23⟩ partial dislocations in wurtzite GaN
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/10993/18683
Electronic structure of 1/6⟨20-23⟩ partial dislocations in wurtzite GaN
English
Kioseoglou, Joseph [Department of Physics, Aristotle University of Thessaloniki]
Kalesaki, Efterpi mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Lymperakis, Liverios [Computational Materials Design Department, Max-Planck-Institut fur Eisenforschung]
Neugebauer, Jorg [Computational Materials Design Department, Max-Planck-Institut fur Eisenforschung]
Komninou, Philomela [Department of Physics, Aristotle University of Thessaloniki]
Karakostas, Theodoros [Department of Physics, Aristotle University of Thessaloniki]
19-Apr-2011
Journal of Applied Physics
American Institute of Physics
109
083511
Yes (verified by ORBilu)
International
0021-8979
Melville
NY
[en] The I1 intrinsic basal stacking faults (BSFs) are acknowledged as the principal defects observed on {11-20} (a-plane) and {1-100} (m-plane) grown GaN. Their importance is established by recent experimental results, which correlate the partial dislocations (PDs) bounding I1 BSFs to the luminescence characteristics of GaN. PDs are also found to play a critical role in the alleviation of misfit strain in hetero-epitaxially grown nonpolar and semipolar films. In the present study, the energetics and the electronic structure of twelve edge and mixed 1/6⟨20-23⟩ PD configurations are investigated by first principles calculations. The specific PD cores of the dislocation loop bounding the I1 BSF are identified for III-rich and N-rich growth conditions. The core structures of PDs induce multiple shallow and deep states, attributed to the low coordinated core atoms, indicating that the cores are electrically active. In contrast to edge type threading dislocations no strain induced states are found.
Aristotle University of Thessaloniki
European Commission - EC
Researchers ; Professionals ; Students ; General public ; Others
http://hdl.handle.net/10993/18683
10.1063/1.3569856
http://scitation.aip.org/content/aip/journal/jap/109/8/10.1063/1.3569856
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