Reference : InGaN nano-LEDs for energy saving optoelectronics
Scientific congresses, symposiums and conference proceedings : Paper published in a book
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/10993/18646
InGaN nano-LEDs for energy saving optoelectronics
English
Marso, Michel mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit >]
Mikulics, Martin [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
Winden, Andreas []
Arango, Y. C. [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
Schäfer, A. [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
Sofer, Zdenĕk [Department of Inorganic Chemistry, Institute of Chemical Technology, Technická 5, 166 28 Prague 6,Czech Republic]
Grützmacher, Detlev [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
Hardtdegen, Hilde []
Oct-2014
Conference Proceedings The 10th International Conference on Advanced Semiconductor devices and Microsystems
No
No
International
978-1-4799-5474-2
10th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM 2014
from 20-10-2014 to 22-10-2014
Slovak University of Technology in Bratislava
Smolenice
Slovakia
[en] Vertically integrated III-nitride nano-LEDs designed for operation in the
telecommunication-wavelength range were fabricated and tested in the (p-
GaN/InGaN/n-GaN/sapphire) material system. We found that the band edge
luminescence energy of the nano-LEDs could be engineered by their size and
by the strain interaction with the masked SiO2/GaN substrates; it depends
linearly on the structure size. The results of reliability measurements prove
that our technological process is perfectly suited for long-term operation of
the LEDs without any indication of degradation effects. The presented
technology shows strong potential for future low energy consumption
optoelectronics.
Researchers ; Professionals ; Students
http://hdl.handle.net/10993/18646

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