Reference : Prediction of photovoltaic p-n device short circuit current by photoelectrochemical a...
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Multidisciplinary, general & others
http://hdl.handle.net/10993/18087
Prediction of photovoltaic p-n device short circuit current by photoelectrochemical analysis of p-type CIGSe films
English
Colombara, Diego mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Crossay, Alexandre mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Regesch, David mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Broussillou, Cedric [Nexcis, 190 av. Célestin Coq, Zone Industrielle, 13790 Rousset, France]
Goislard de Monsabert, Thomas [Nexcis, 190 av. Célestin Coq, Zone Industrielle, 13790 Rousset, France]
Grand, Pierre-Philippe [Nexcis, 190 av. Célestin Coq, Zone Industrielle, 13790 Rousset, France]
Dale, Phillip mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Nov-2014
Electrochemistry Communications
Elsevier Science
48
99-102
Yes (verified by ORBilu)
International
1388-2481
New York
NY
[en] Photocurrent spectroscopy ; Cu(In,Ga)Se2 ; Opto-electronic quality ; Photoluminescence ; Short-circuit-current ; Efficiency
[en] The quality control of individual semiconductor thin films during fabrication of multiple layers is important for industry and academia. The ultimate aim of this research is to predict the efficiency of p-–n junction solar cells by photoelectrochemical analysis of the bare p-type semiconductor. A linear correlation between the photocurrent measured electrochemically on Cu(In,Ga)Se2 absorber layers through a Eu3+ electrolyte junction and short circuit current and efficiency of the corresponding solid state devices is found. However, the correlation is complicated by pronounced recombination at the semiconductor/electrolyte interface, while the solid state interface behaves more ideally.
European Union’'s Seventh Framework Programme FP7/2007-2013 under grant agreement no. 284486
Researchers ; Professionals ; Students
http://hdl.handle.net/10993/18087
10.1016/j.elecom.2014.08.026
http://www.sciencedirect.com/science/article/pii/S1388248114002811
The original publication is available at http://www.sciencedirect.com/science/article/pii/S1388248114002811
FP7 ; 284486 - SCALENANO - Development and scale-up of nanostructured based materials and processes for low cost high efficiency chalcogenide based photovoltaics

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