Reference : Threshold for potential sputtering of LiF
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/10993/17407
Threshold for potential sputtering of LiF
English
Hayderer, G. [Technische Universität Wien = Vienna University of Technology - TU Vienna > Institut für Allgemeine Physik]
Schmid, M. [Technische Universität Wien = Vienna University of Technology - TU Vienna > Institut für Allgemeine Physik]
Varga, P. [Technische Universität Wien = Vienna University of Technology - TU Vienna > Institut für Allgemeine Physik]
Winter, H. P. [Technische Universität Wien = Vienna University of Technology - TU Vienna > Institut für Allgemeine Physik]
Aumayr, F. [Technische Universität Wien = Vienna University of Technology - TU Vienna > Institut für Allgemeine Physik]
Wirtz, Ludger mailto [Technische Universität Wien = Vienna University of Technology - TU Vienna > Institute for Theoretical Physics]
Lemell, C. [Technische Universität Wien = Vienna University of Technology - TU Vienna > Institute for Theoretical Physics]
Burgdorfer, J. [Technische Universität Wien = Vienna University of Technology - TU Vienna > Institute for Theoretical Physics]
Hagg, L. [Mid Sweden University > Department of Physics and Mathematics]
Reinhold, C. O. [Oak Ridge National Laboratory, Oak Ridge, Tennessee]
1999
Physical Review Letters
American Physical Society
83
19
3948-3951
Yes (verified by ORBilu)
International
0031-9007
1079-7114
Ridge
NY
[en] We have measured total sputtering yields for impact of slow (less than or equal to 100 eV) singly and doubly charged ions on LiF. The minimum potential energy necessary to induce potential sputtering (PS) from UF was determined to be about 10 eV. This threshold coincides with the energy necessary to produce a cold hole in the valence band of LiF by resonant neutralization. This allows the first unambiguous identification of PS induced by cold holes. Further stepwise increase of the sputtering yield with higher projectile potential energies provides evidence for additional defect-mediated sputtering mechanisms operative in alkali halides.
http://hdl.handle.net/10993/17407
10.1103/PhysRevLett.83.3948

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