Reference : Impact of thermal annealing on nonequilibrium carrier dynamics in single-crystal, fre...
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/10993/16064
Impact of thermal annealing on nonequilibrium carrier dynamics in single-crystal, freestanding GaAs mesostructures
English
Mikulics, Martin [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
Hardtdegen, Hilde [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
Adam, Roman [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
Grützmacher, Detlev [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, Germany]
Gregušová, Dagmar [Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovakia]
Novák, Jozef [Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovakia]
Kordoš, Peter [Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovakia, and Department of Microelectronics, Slovak University of Technology, SK-81219 Bratislava, Slovakia]
Sofer, Zdenĕk [Department of Inorganic Chemistry, Institute of Chemical Technology, Technická 5, Prague 6,Czech Republic]
Serafini, J. [Department of Physics and Astronomy and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627, USA]
Zhang, J. [Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627, USA]
Sobolewski, Roman [Department of Physics and Astronomy and Laboratory for Laser Energetics, and Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627, USA]
Marso, Michel mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Engineering Research Unit >]
2014
Semiconductor Science & Technology
29
045022
Yes (verified by ORBilu)
International
0268-1242
[en] GaAs ; traps ; micro-photoluminescence ; annealing ; terahertz
[en] We report on the impact of thermal annealing to carrier transport and transient, subpicosecond photoresponse of freestanding GaAs mesostructures. Our measurements included micro-photoluminescence and dark current and responsivity studies as well as optical femtosecond characterization. The fabricated GaAs mesostructures consisted of both mesowires and platelets that were integrated into coplanar striplines to form a photoconductive switch. We demonstrate that an optimized annealing process of our mesostructures, performed at 600 ◦C for 20 min, led to restoring bulklike properties of our freestanding devices. They exhibited dark currents below 600 pA at 10 V bias, responsivity of 0.2 A W−1 at 30 V, and mobility as high as 7300 cm2 V s−1. The annealed freestanding GaAs photodetectors were characterized by subpicosecond carrier relaxation dynamics with negligible trapping and a cutoff frequency of 1.3 THz. The latter characteristics make them excellent candidates for THz-bandwidth optoelectronics.
Researchers ; Professionals ; Students
http://hdl.handle.net/10993/16064
10.1088/0268-1242/29/4/045022

File(s) associated to this reference

Fulltext file(s):

FileCommentaryVersionSizeAccess
Limited access
180_SST_29_2014_045022.pdfPublisher postprint772.24 kBRequest a copy

Bookmark and Share SFX Query

All documents in ORBilu are protected by a user license.