Reference : Synthesis, Characterization, and Electronic Structure of Single-Crystal SnS, Sn2S3, a...
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Chemistry
http://hdl.handle.net/10993/14486
Synthesis, Characterization, and Electronic Structure of Single-Crystal SnS, Sn2S3, and SnS2
English
Burton, Lee A. [University of Bath > Department of Chemistry > Centre for Sustainable Chemical Technologies]
Colombara, Diego mailto [University of Luxembourg > Faculty of Science, Technology and Communication (FSTC) > Physics and Materials Science Research Unit >]
Abellon, Ruben D. [Delft University of Technology > Department of Chemical Engineering > Opto-Electronic Materials Section]
Grozema, Ferdinand C. [Delft University of Technology > Department of Chemical Engineering > Opto-Electronic Materials Section]
Peter, Laurence M. [University of Bath > Department of Chemistry]
Savenije, Tom J. [Delft University of Technology > Department of Chemical Engineering > Opto-Electronic Materials Section]
Dennler, Gilles [IMRA Europe SAS, Sophia Antipolis Cedex, France > Department Energy and the Environment]
Walsh, Aron [University of Bath > Department of Chemistry > Centre for Sustainable Chemical Technologies]
27-Nov-2013
Chemistry of Materials
American Chemical Society
25
24
4908-4916
Yes (verified by ORBilu)
International
0897-4756
Washington
DC
[en] Semiconductor ; Earth-abundant ; Photovoltaic ; Tin sulfide ; Workfunction
[en] Tin sulfide is being widely investigated as an earth-abundant light harvesting material, but recorded efficiencies for SnS fall far below theoretical limits. We describe the synthesis and characterization of the single-crystal tin sulfides (SnS, SnS2, and Sn2S3) through chemical vapor transport, and combine electronic structure calculations with time-resolved microwave conductivity measurements to shed light on the underlying electrical properties of each material. We show that the coexistence of the Sn(II) and Sn(IV) oxidation states would limit the performance of SnS in photovoltaic devices due to the valence band alignment of the respective phases and the ''asymmetry'' in the underlying point defect behavior. Furthermore, our results suggest that Sn2S3, in addition to SnS, is a candidate material for low-cost thin-film solar cells.
Royal Society University Research Fellowship ; EPSRC Grants No. EP/G03768X/1, EP/J017361/1 and EP/I019693/1 ; EPSRC Grant No. EP/F029624/1 (SuperGen: Photovoltaic Materials for the 21st Century) ; EPSRC Grant No. EP/F067496 (HPC Materials Chemistry Consortium)
Researchers ; Professionals ; Students
http://hdl.handle.net/10993/14486
10.1021/cm403046m
http://pubs.acs.org/doi/abs/10.1021/cm403046m

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