References of "Thin Solid Films"
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See detailCu2SnS3 based thin film solar cells from chemical spray pyrolysis
Sayed, Mohamed H.; Robert, Erika UL; Dale, Phillip UL et al

in Thin Solid Films (2019), 669

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See detailInnovation highway: Breakthrough milestones and key evelopments in chalcopyrite photovoltaics from a retrospective viewpoint
Abou-Ras, Daniel; Wagner, Sigur; Stanbery, Bill J. et al

in Thin Solid Films (2017), 633

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See detailWhat is the dopant concentration in polycrystalline thin-film Cu(In,Ga)Se2 ?
Werner, Florian UL; Bertram, Tobias UL; Mengozzi, Jonathan et al

in Thin Solid Films (2017), 633

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See detailPost-deposition treatment of Cu2ZnSnSe4 with alkalis
Rey, Germain UL; Babbe, Finn UL; Weiss, Thomas UL et al

in Thin Solid Films (2016), 633

Low temperature post-deposition treatment of Cu2ZnSnSe4 with NaF and KF significantly improved the solar cell efficiency (from 6.4% to 7.8% and 7.7% on average, respectively) due to enhanced fill factor ... [more ▼]

Low temperature post-deposition treatment of Cu2ZnSnSe4 with NaF and KF significantly improved the solar cell efficiency (from 6.4% to 7.8% and 7.7% on average, respectively) due to enhanced fill factor (from 0.58 to 0.61 and 0.62), open-circuit voltage (Voc) (from 314 mV to 337 mV and 325 mV) and short-circuit current density (from 35.3 mA⋅cm −2 to 38.3 mA⋅cm −2 and 38.6 mA⋅cm −2). Voc improvement was higher for solar cells with NaF treatment due to an increase in radiative efficiency at room temperature and shallower defect activation energy as determined by photoluminescence (PL) and temperature dependent admittance spectroscopy, respectively. In the case of KF treatment, red-shift of the PL, higher band tail density of state and donor activation energy deeper in the band gap were limiting further improvement of the Voc compared to NaF treatment. [less ▲]

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See detailEpitaxial Cu2ZnSnSe4 thin films and devices
Redinger, Alex UL; Groiss, Heiko; Sendler, Jan UL et al

in THIN SOLID FILMS (2015), 582

Epitaxial Cu2ZnSnSe4 (CZTSe) thin films have been grown via high temperature coevaporation on GaAs(001). Electron backscattering diffraction confirms epitaxy in a wide compositional range. Different ... [more ▼]

Epitaxial Cu2ZnSnSe4 (CZTSe) thin films have been grown via high temperature coevaporation on GaAs(001). Electron backscattering diffraction confirms epitaxy in a wide compositional range. Different secondary phases are present in the epitaxial layer. The main secondary phases are Cu2SnSe3 and ZnSe which grow epitaxially on top of the CZTSe. Transmission electron microscopy measurements show that the epitaxial CZTSe grows predominantly parallel to the c-direction. Epitaxial CZTSe solar cells with a maximum power conversion efficiency of 2.1\%, an open-circuit voltage of 223 mV and a current density of 16 mA/cm(2) are presented. (C) 2014 Elsevier B.V. All rights reserved. [less ▲]

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See detailSimplified formation process for Cu2ZnSnS4-based solar cells
Berg, Dominik UL; Crossay, Alexandre UL; Guillot, Jérôme et al

in Thin Solid Films (2014), 573

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See detailEpitaxial Cu2ZnSnSe4 thin films and devices
Redinger, Alex UL; Groiss, Heiko; Sendler, Jan UL et al

in Thin Solid Films (2014)

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See detailCuInSe2 semiconductor formation by laser annealing
Meadows, Helen UL; Regesch, David UL; Thevenin, Maxime UL et al

in Thin Solid Films (2014)

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See detail4-Amino-1,2,4-triazole: Playing a key role in the chemical deposition of Cu–In–Ga metal layers for photovoltaic applications.
Berner, Ulrich; Widenmeyer, Markus; Engler, Patrick et al

in Thin Solid Films (2014)

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See detailWhy are kesterite solar cells not 20% efficient?
Siebentritt, Susanne UL

in Thin Solid Films (2013)

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See detailHCl and Br2-MeOH etching of Cu2ZnSnSe4 polycrystalline absorbers
Mousel, Marina UL; Redinger, Alex UL; Djemour, Rabie UL et al

in Thin Solid Films (2013), 535

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See detailFormation of Cu3BiS3 thin films via sulfurization of Bi–Cu metal precursors
Colombara, Diego UL; Peter, Laurence M.; Hutchings, Kyle et al

in Thin Solid Films (2012), 520(16), 51655171

Thin films of Cu3BiS3 have been produced by conversion of stacked and co-electroplated Bi–Cu metal precursors in the presence of elemental sulfur vapor. The roles of sulfurization temperature and heating ... [more ▼]

Thin films of Cu3BiS3 have been produced by conversion of stacked and co-electroplated Bi–Cu metal precursors in the presence of elemental sulfur vapor. The roles of sulfurization temperature and heating rate in achieving single-phase good quality layers have been explored. The potential loss of Bi during the treatments has been investigated, and no appreciable compositional difference was found between films sulfurized at 550 °C for up to 16 h. The structural, morphological and photoelectrochemical properties of the layers were investigated in order to evaluate the potentials of the compound for application in thin film photovoltaics. [less ▲]

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See detailThin film solar cells based on the ternary compound Cu2SnS3
Berg, Dominik M.; Djemour, Rabie UL; Gütay, Levent UL et al

in Thin Solid Films (2012), 520

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See detailFormation of CuSbS2 and CuSbSe2 thin films via chalcogenisation of Sb–Cu metal precursors
Colombara, Diego UL; Peter, Laurence M.; Rogers, Keith D. et al

in Thin Solid Films (2011), 519(21), 74387443

Due to the availability and low cost of the elements, the ternary Cu–Sb–S and Cu–Sb–Se semiconductor systems are being studied as sustainable alternative absorber materials to replace CuIn(Ga)(S,Se)2 in ... [more ▼]

Due to the availability and low cost of the elements, the ternary Cu–Sb–S and Cu–Sb–Se semiconductor systems are being studied as sustainable alternative absorber materials to replace CuIn(Ga)(S,Se)2 in thin film photovoltaic applications. Simple evaporation of the metal precursors followed by annealing in a chalcogen environment has been employed in order to test the feasibility of converting stacked metallic layers into the desired compounds. Other samples have been produced from aqueous solutions by electrochemical methods that may be suitable for scale-up. It was found that the minimum temperature required for the complete conversion of the precursors into the ternary chalcogen is 350 °C, while binary phase separation occurs at lower temperatures. The new materials have been characterised by structural, electrical and photoelectrochemical techniques in order to establish their potential as absorber layer materials for photovoltaic applications. The photoactive films consisting of CuSbS2 and CuSbSe2 exhibit band-gap energies of ~ 1.5 eV and ~ 1.2 eV respectively, fulfilling the Shockley–Queisser requirements for the efficient harvesting of the solar spectrum. [less ▲]

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See detailDefects levels in CuGaSe2 by modulated photocurrent spectroscopy
Krysztopa, A.; Igalson, Malgorzata; Zabierowski, Powel et al

in Thin Solid Films (2011), 519

Detailed reference viewed: 67 (0 UL)