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See detailFull counting statistics of Majorana interferometers
Strubi, Gregory; Belzig, Wolfgang; Schmidt, Thomas UL et al

in Physica E (2015), 74

We study the full counting statistics of interferometers for chiral Majorana fermions with two incoming and two outgoing Dirac fermion channels. In the absence of interactions, the FCS can be obtained ... [more ▼]

We study the full counting statistics of interferometers for chiral Majorana fermions with two incoming and two outgoing Dirac fermion channels. In the absence of interactions, the FCS can be obtained from the 4×4 scattering matrix S that relates the outgoing Dirac fermions to the incoming Dirac fermions. After presenting explicit expressions for the higher-order current correlations for a modified Hanbury Brown–Twiss interferometer, we note that the cumulant-generating function can be interpreted such that unit-charge transfer processes correspond to two independent half-charge transfer processes, or alternatively, to two independent electron-hole conversion processes. By a combination of analytical and numerical approaches, we verify that this factorization property holds for a general SO(4) scattering matrix, i.e. for a general interferometer geometry. [less ▲]

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See detailWet low-temperature gate oxidation for nanoscale vertical field-effect transistors,
Goryll, M.; Moers, J.; Trellenkamp, S. et al

in Physica E (2003), 19(2003), 18-22

In this work, we present an approach towards improving a vertical eld-e ect transistor based on a narrow mesa that is capable of showing complete channel inversion. Contrary to similar concepts it does ... [more ▼]

In this work, we present an approach towards improving a vertical eld-e ect transistor based on a narrow mesa that is capable of showing complete channel inversion. Contrary to similar concepts it does not necessarily require the use of an SOI substrate due to the chosen vertical layer sequence. An important issue during process flow is the limited thermal budget in order to preserve the desired channel length. Here a low-temperature wet oxidation process is investigated to prevent dopant di ffusion in early process steps. Results on the thickness homogeneity and electrical properties of this gate oxide will be presented and discussed. [less ▲]

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