References of "Nanotechnology"
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See detailInfluence of clustering on the magnetic properties and hyperthermia performance of iron oxide nanoparticles
Bender, Philipp Florian UL; Fock, J.; Hansen, M. F. et al

in Nanotechnology (2018), 29

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See detailFermi energy dependence of the optical emission in core/shell InAs nanowire homostructures
Möller, Michael; Oliveira, DS; Sahoo, PK et al

in Nanotechnology (2017), 28

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See detailAnomalous glass transition behavior of SBR–Al2O3 nanocomposites at small filler concentrations
Sushko, Rymma UL; Filimon, Marlena UL; Dannert, Rick UL et al

in Nanotechnology (2014), 25(42), 425704

Elastomers filled with hard nanoparticles are of great technical importance for the rubber industry. In general, fillers improve mechanical properties of polymer materials, e.g. elastic moduli, tensile ... [more ▼]

Elastomers filled with hard nanoparticles are of great technical importance for the rubber industry. In general, fillers improve mechanical properties of polymer materials, e.g. elastic moduli, tensile strength etc. The smaller the size of the particles the larger is the interface where interactions between polymer molecules and fillers can generate new properties. Using temperature-modulated differential scanning calorimetry and dynamic mechanical analysis, we investigated the properties of pure styrene-butadiene rubber (SBR) and SBR/alumina nanoparticles. Beside a reinforcement effect seen in the complex elastic moduli, small amounts of nanoparticles of about 2 wt% interestingly lead to an acceleration of the relaxation modes responsible for the thermal glass transition. This leads to a minimum in the glass transition temperature as a function of nanoparticle content in the vicinity of this critical concentration. The frequency dependent elastic moduli are used to discuss the possible reduction of the entanglement of rubber molecules as one cause for this unexpected behavior. [less ▲]

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See detailAcoustic charge transport in GaN nanowires
Ebbecke, J.; Maisch, S.; Wixforth, A. et al

in Nanotechnology (2008), 19(27), 275708-5

We present acoustic charge transport in GaN nanowires (GaN NWs). The GaN NWs were grown by molecular beam epitaxy (MBE) on silicon(111) substrates. The nanowires were removed from the silicon substrate ... [more ▼]

We present acoustic charge transport in GaN nanowires (GaN NWs). The GaN NWs were grown by molecular beam epitaxy (MBE) on silicon(111) substrates. The nanowires were removed from the silicon substrate, aligned using surface acoustic waves (SAWs) on the piezoelectric substrate LiNbO3 and finally contacted by electron beam lithography. Then, a SAW was used to create an acoustoelectric current in the GaN NWs which was detected as a function of radio-frequency (RF) wave frequency and its power. The presented method and our experimental findings open up a route towards new acoustic charge transport nanostructuredevices in a wide bandgap material such as GaN. [less ▲]

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