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See detailInfluence of layer structure on performance of AlGaN/GaN High Electron Mobility Transistors before and after passivation
Bernát, J.; Javorka, P.; Fox, A. et al

in Journal of Electronic Materials (2004), 33((2004)), 436-439

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See detailPhotoionization spectroscopy of traps in AlGaN/GaN HEMTs
Wolter, M.; Javorka, P.; Marso, Michel UL et al

in Journal of Electronic Materials (2002), 31(12), 1321-1324

Detailed reference viewed: 13 (0 UL)