References of "Electronics Letters"
     in
Bookmark and Share    
Full Text
Peer Reviewed
See detailSiO2 /AlGaN/GaN MOSHFET with 0.7 µm gate-length and fmax / fT of 40/24 GHz
Bernát, J.; Gregusová, D.; Heidelberger, G. et al

in Electronics Letters (2005), 41(11), 667-668

The performance of SiO2/AlGaN/GaN MOSHFETs is described. The C–V measurements showed slight increase in sheet carrier density after applying 12 nm-thick PECVD SiO2. The devices exhibited gate leakage ... [more ▼]

The performance of SiO2/AlGaN/GaN MOSHFETs is described. The C–V measurements showed slight increase in sheet carrier density after applying 12 nm-thick PECVD SiO2. The devices exhibited gate leakage current of 5 .10 ^-10 A/mm. Small-signal RF characterisation of 0.7 mm gate length devices yielded an fT of 24 GHz and an fmax of 40 GHz, which are comparable to those typical for state-of-the-art AlGaN/GaN HFETs. [less ▲]

Detailed reference viewed: 20 (0 UL)
Full Text
Peer Reviewed
See detailImpact of layer structure on performance of unpassivated AlGaN/GaN/SiC HEMTs,
Bernát, J.; Wolter, M.; Fox, A. et al

in Electronics Letters (2004), 40(1), 78-80

The performance of unpassivated AlGaN=GaN=SiC HEMTs prepared on different MOVPE grown layer structures is reported. An overall improvement of device characteristics using doped structures in comparison to ... [more ▼]

The performance of unpassivated AlGaN=GaN=SiC HEMTs prepared on different MOVPE grown layer structures is reported. An overall improvement of device characteristics using doped structures in comparison to undoped counterpart is observed. This can be demonstrated by IDS of 0.86 and 1.33 A=mm, gm of 220 and 273 mS=mm, fT of 33 and 43 GHz and fmax of 54 and 61 GHz for 0.3 mm gate length devices on undoped and doped structures, respectively. The DC=pulsed I–V characteristics as well as power measurements show insignificant RF dispersion of HEMTs on doped structures. These results underline the advantage of doped layer structures for preparation of high-performance AlGaN=GaN HEMTs. [less ▲]

Detailed reference viewed: 36 (0 UL)
Full Text
Peer Reviewed
See detailInfluence of SiO/sub 2/ and Si/sub 3/N/sub 4/ passivation on AlGaN/GaN/Si HEMT performance,
Javorka, P.; Bernát, J.; Fox, A. et al

in Electronics Letters (2003), 39((2003)), 1155-1157

Different influence of SiO2 and Si3N4 passivation on performance of AlGaN=GaN=Si HEMTs is reported. DC characteristics are less enhanced by using SiO2 than Si3N4. This is in agreement with carrier ... [more ▼]

Different influence of SiO2 and Si3N4 passivation on performance of AlGaN=GaN=Si HEMTs is reported. DC characteristics are less enhanced by using SiO2 than Si3N4. This is in agreement with carrier concentration changes after passivation, as follows from Hall data. Small signal RF performance is degraded after applying SiO2 and enhanced after Si3N4 passivation, e.g. for unpassivated devices fTffi17 GHz which decreased to 9 GHz and increased to 28 GHz for SiO2 and Si3N4 respectively. The fmax=fT ratio has not changed after passivation. [less ▲]

Detailed reference viewed: 24 (0 UL)
Full Text
Peer Reviewed
See detailAlGaN/GaN HEMTs on Silicon Substrates with f¬T of 32/20 GHz and fmax of 27/22 GHz for 0.5/0.7 µm gate length,
Javorka, P.; Alam, A.; Fox, A. et al

in Electronics Letters (2002), 38(2002), 288-289

AlGaN/GaN HEMTs on silicon substrates have been realised and their static and small signal characteristics investigated. The AlGaN/GaN (x=0.23) material structures were grown on (111) p-Si by LP-MOVPE ... [more ▼]

AlGaN/GaN HEMTs on silicon substrates have been realised and their static and small signal characteristics investigated. The AlGaN/GaN (x=0.23) material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current density of 0.53 to 0.68 A/mm and a peak extrinsic transconductance of 110 mS/mm. A unity gain frequency of 20 and 32 GHz and a maximum frequency of oscillation of 22 and 27 GHz are obtained for devices with a gate length of 0.7 and 0.5 mm, respectively. These values are the highest reported so far on AlGaN=GaN=Si HEMTs and are comparable to those known for devices using sapphire and SiC substrates. [less ▲]

Detailed reference viewed: 19 (0 UL)
Full Text
Peer Reviewed
See detailAlGaN/GaN Varactor Diode for Integration in HEMT Circuits
Marso, Michel UL; Wolter, M.; Javorka, P. et al

in Electronics Letters (2001), 37(2001), 1476-1478

Fabrication and characterisation of metal-semiconductor-metal (MSM) diodes above an AlGaN/GaN HEMT layer system for varactor applications are reported. Device fabrication uses standard HEMT processing ... [more ▼]

Fabrication and characterisation of metal-semiconductor-metal (MSM) diodes above an AlGaN/GaN HEMT layer system for varactor applications are reported. Device fabrication uses standard HEMT processing steps, allowing integration in HEMT circuits without the need of sophisticated growth or etching techniques. Capacitancevoltage measurements exhibit CMAX/CMIN ratios up to 100, tunable by the electrode geometry. These results exceed best values for published heterostructure varactor diodes. Fabrication of AlGaN/GaN HEMTs on the same layer system with identical technology prove the potential for monolithic integration. [less ▲]

Detailed reference viewed: 79 (0 UL)
Full Text
Peer Reviewed
See detailAlGaN/GaN Round-HEMTs on (111) silicon substrates
Javorka, P.; Alam, A.; Nastase, N. et al

in Electronics Letters (2001), 37(2001), 1364-1366

AlGaN/GaN Round-HEMTs on silicon substrates have been realised and their static characteristics investigated. The AlGaN/GaN (x = 0.23) material structures were grown on (111) p-Si by LP-MOVPE. Devices ... [more ▼]

AlGaN/GaN Round-HEMTs on silicon substrates have been realised and their static characteristics investigated. The AlGaN/GaN (x = 0.23) material structures were grown on (111) p-Si by LP-MOVPE. Devices with 0.3 mm gate length exhibit a saturation current of 0.82 A/mm, a good pinch-off and a peak extrinsic transconductance of 110 mS/mm. Highest saturation current reported so far and static output characteristics up to 20 V demonstrate that the devices are capable of handling 16 W/mm of static heat dissipation without any degradation of their performance. [less ▲]

Detailed reference viewed: 47 (0 UL)
Full Text
Peer Reviewed
See detail19 GHz vertical Si p-channel MOSFET
Moers, J.; Klaes, D.; Tönnesmann, A. et al

in Electronics Letters (1999), 35(1999), 239-240

Vertical Si p-MOSFETs with channel lengths of 100nm were fabricated using selective low pressure chemical vapour deposition (LPCVD) epitaxial growth and conventional i-line lithography. The layout, called ... [more ▼]

Vertical Si p-MOSFETs with channel lengths of 100nm were fabricated using selective low pressure chemical vapour deposition (LPCVD) epitaxial growth and conventional i-line lithography. The layout, called VOXFET, reduces gate to source/drain overlap capacitances, thus improving high speed applications. Transistors with a gate width of 12 um and gate oxide thickness of 10nm show transconductances gM of 200mS/mm and measured cutoff frequencies of fT = 8.7GHz and fMAX = 19.2 GHz. [less ▲]

Detailed reference viewed: 94 (0 UL)
Full Text
Peer Reviewed
See detail550 GHz bandwidth photodetector on low-temperature grown molecular-beam epitaxial GaAs
Kordoš, P.; Förster, A.; Marso, Michel UL et al

in Electronics Letters (1998), 34(1998), 119-120

The authors demonstrate that a 550GHz bandwidth photodetector can be fabricated on low-temperature grown MBE GaAs. The pulse response shows 0.4 and 0.6ps rise and fall times, respectively. The bandwidth ... [more ▼]

The authors demonstrate that a 550GHz bandwidth photodetector can be fabricated on low-temperature grown MBE GaAs. The pulse response shows 0.4 and 0.6ps rise and fall times, respectively. The bandwidth is in agreement with a value calculated using a carrier lifetime of 0.2ps, measured by femtosecond time-resolved reflectivity, and a capacitance of 0.014fF/um2, determined from microwave measurements. The device bandwidth is RC limited. [less ▲]

Detailed reference viewed: 55 (0 UL)
Full Text
Peer Reviewed
See detail16 GHz Bandwidth MSM Photodetector and 45/85 GHz fT/fmax HEMT Prepared on an Identical InGaAs/InP Layer Structure
Horstmann, M.; Schimpf, K.; Marso, Michel UL et al

in Electronics Letters (1996), 32

Detailed reference viewed: 120 (0 UL)
Full Text
Peer Reviewed
See detailResponsivity Enhancement of InGaAs Based MSM Photodetectors Using 2DEG Layer Sequence and Semitransparent Electrodes
Horstmann, M.; Marso, Michel UL; Muttersbach, J. et al

in Electronics Letters (1996), 32

The optoelectronic behaviour of InGaAs based metalsemiconductor-metal photodetectors with semitransparent electrodes is investigated. The devices with 50 x 50 um2 area and interdigitated electrodes with ... [more ▼]

The optoelectronic behaviour of InGaAs based metalsemiconductor-metal photodetectors with semitransparent electrodes is investigated. The devices with 50 x 50 um2 area and interdigitated electrodes with 2um finger-spacing and finger-width exhibit a dark current density less than 10pA/um2, a breakdown voltage of 45V and a saturation capacitance of 30fF. A DC responsivity of 0.61A/W and a –3dB bandwidth of 8.5GHz were achieved. The electric potential distribution is modified by a 2DEG inserted in the layer structure leading, to improved bandwidth. [less ▲]

Detailed reference viewed: 49 (0 UL)
Full Text
Peer Reviewed
See detailThermionic Field Emission in p-Barrier enhanced InP/InGaAs/InP HEMTs
Schimpf, K.; Horstmann, M.; Hardtdegen, H. et al

in Electronics Letters (1996), 32(1996), 2132-2133

A model for thermionic field emission in p-barrier enhanced InP HEMTs is presented indicating that a reduction in the gate leakage of those devices is related to an increase in effective barrier thickness ... [more ▼]

A model for thermionic field emission in p-barrier enhanced InP HEMTs is presented indicating that a reduction in the gate leakage of those devices is related to an increase in effective barrier thickness. Good agreement between this model and our experimental data is obtained. [less ▲]

Detailed reference viewed: 53 (0 UL)
Full Text
Peer Reviewed
See detailNovel HEMT layout: The RoundHEMT
Marso, Michel UL; Schimpf, K.; Fox, A. et al

in Electronics Letters (1995), 31(1995), 589-591

Detailed reference viewed: 60 (0 UL)
Full Text
Peer Reviewed
See detailSubmicrometer Silicon Permeable Base Transistors with Buried CoSi2 Gates
Schüppen, A.; Vescan, L.; Marso, Michel UL et al

in Electronics Letters (1993), 29(1993), 215-217

Detailed reference viewed: 10 (0 UL)
Full Text
Peer Reviewed
See detailn-InGaAs Schottky Diode with Current Transport along 2DEG Channel
Kordoš, P.; Marso, Michel UL; Fox, A. et al

in Electronics Letters (1992), 28(1992), 1689-1690

Detailed reference viewed: 63 (0 UL)
Full Text
Peer Reviewed
See detailGaInAs Camel transistors With Current Gain Above 6 at Room Temperature
Marso, Michel UL; Zwinge, G.; Grützmacher, D. et al

in Electronics Letters (1991), 27(1991), 335-337

Detailed reference viewed: 34 (0 UL)
Full Text
Peer Reviewed
See detailBarrier Height Enhancement of n-In0.53Ga0.47As Schottky Diodes Grown by MOCVD Technique
Kordoš, P.; Marso, Michel UL; Meyer, R. et al

in Electronics Letters (1991), 27(1991), 1759-1760

Detailed reference viewed: 47 (0 UL)
Full Text
Peer Reviewed
See detailGaInAs Camel Transistors Grown by MOCVD
Marso, Michel UL; Zwinge, G.; Beneking, H.

in Electronics Letters (1989), 25(1989), 1462-1463

Detailed reference viewed: 48 (0 UL)