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See detailElectrodeposition of germanium-containing precursors for Cu2(Sn,Ge)S3 thin film solar cells
Malaquias, Joao Corujo Branco UL; Wu, Minxian; Lin, Jiajia et al

in Electrochimica Acta (2017)

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See detailElectrodeposition and selenization of brass/tin/germanium multilayers for Cu2Zn(Sn1-xGex)Se4 thin film photovoltaic devices
Clauwaert, Kwinten; Goossens, Maaike; De Wild, Jessica UL et al

in Electrochimica Acta (2016), 198

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See detailRocking disc electro-deposition of CuIn alloys, selenisation, and pinhole effect minimisation in CISe solar absorber layers
Cummings, Charles Y.; Zoppi, Guillaume; Forbes, Ian et al

in Electrochimica Acta (2012), 79

The co-electrodeposition of copper and indium from a pH 3 tartrate bath onto 4.8 cm × 2.5 cm Mo and MoSe2 substrates is studied and conditions are optimised for CuIn alloy films. Selenisation at ca. 500 ... [more ▼]

The co-electrodeposition of copper and indium from a pH 3 tartrate bath onto 4.8 cm × 2.5 cm Mo and MoSe2 substrates is studied and conditions are optimised for CuIn alloy films. Selenisation at ca. 500 °C for 30 min in selenium vapour gives CuInSe2 (or CISe). Mapping using the photo-electrochemical reduction of Eu(NO3)3 is used to asses the relative photoactivity as a function of position and surface treatment.Etching of detrimental CuxSe phases is investigated with 5% and 0.5% (w/w) aqueous KCN. The slower 0.5% (w/w) KCN etch allows better process control, and re-annealing at 500 °C for 30 min followed by further etching significantly improved the photo-activity. However, over the large area local pinhole recombination effects are substantial. An alternative low temperature film optimisation method is proposed based on (i) KCN over-etch, (ii) hypochlorite (5%, w/w) pinhole removal (Mo etch), and (iii) a final KCN etch to give good and more uniform activity. [less ▲]

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See detailCoupling of insect antennae to field-effect transistors for biochemical sensing
Schroth, P.; Schöning, M. J.; Schütz, S. et al

in Electrochimica Acta (1999), 44(1999), 3821-3826

A bioelectronic interface based on the coupling of an intact insect antenna to a field-e effct transistor (FET) has been realised in a whole-beetle BioFET (Biologically sensitive FET) and an isolated ... [more ▼]

A bioelectronic interface based on the coupling of an intact insect antenna to a field-e effct transistor (FET) has been realised in a whole-beetle BioFET (Biologically sensitive FET) and an isolated-antenna BioFET configuration. The intrinsic BioFET characteristics, such as current-voltage curves, transconductance and signal-to-noise ratio clearly depend on the chip layout. Therefore, the experiments were performed with three di erent gate geometries: linear shape (5 um x 100 um), U shape (5 um x 1000 um) and meander shape (10 um x 6000 um). The BioFET allows the determination of the `green-leaf odour' Z-3-hexen-l-ol down to the low ppb concentration range. Thus, the detection of plant damages is possible with this novel kind of biosensor. [less ▲]

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