References of "Thin Solid Films"
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See detailSub-bandgap photoconductivity and photocapacitance in CIGS thin films and devices
Igalson, Malgorzata; Urbaniak, A.; Krystopa, A. et al

in Thin Solid Films (2011), 519

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See detailSynthesis and characterization of Cu2ZnSnS4 absorber layers by an electrdeposition-annealing route
Scragg, Jonathan J.; Dale, Phillip UL; Peter, Laurence M.

in Thin Solid Films (2009), 517(7), 2481-2484

An electrodeposition-annealing route to films of the promising p-type absorber material Cu2ZnSnS4 (CZTS) using layered metal precursors is studied. The dependence of device performance on composition is ... [more ▼]

An electrodeposition-annealing route to films of the promising p-type absorber material Cu2ZnSnS4 (CZTS) using layered metal precursors is studied. The dependence of device performance on composition is investigated, and it is shown that a considerable Cu-deficiency is desirable to produce effective material, as measured by photoelectrochemical measurements employing the Eu3+/2+ redox couple. The differing effects of using elemental sulphur and H2S as sulphur sources during annealing are also studied, and it is demonstrated that H2S annealing results in films with improved crystallinity. [less ▲]

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See detailFabrication of Laterally Displaced Porous Silicon Filters
Marso, Michel UL; Wolter, M.; Arens-Fischer, R. et al

in Thin Solid Films (2001), 382(2001), 218-221

Porous silicon superlattices have been used to manufacture laterally displaced dielectric filters with different optical properties on one substrate. Two different fabrication processes for two-colour ... [more ▼]

Porous silicon superlattices have been used to manufacture laterally displaced dielectric filters with different optical properties on one substrate. Two different fabrication processes for two-colour microfilter arrays are presented. Both methods overcome the problem of non-uniform optical properties of the well-known procedure where two filter stacks are grown one upon another, with subsequent partial removal of the upper filter by reactive ion etching. The novel methods give uniform optical properties of the two filter areas, profiting from the main property of the formation process of porous silicon: the formation of porous silicon occurs only at the porous silicon substrate interface. [less ▲]

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See detailSelectively Grown Vertical Si MOS Transistor with Reduced Overlap Capacitances
Klaes, D.; Moers, J.; Tönnesmann, A. et al

in Thin Solid Films (1998), 336(1998), 306-308

Vertical p-MOS transistors with channel length of 130 nm have been fabricated using selective epitaxial growth (SEG) to define the channel region. The vertical layout offers the advantages of achieving ... [more ▼]

Vertical p-MOS transistors with channel length of 130 nm have been fabricated using selective epitaxial growth (SEG) to define the channel region. The vertical layout offers the advantages of achieving short channel lengths and high integration densities while still using optical lithography to define lateral dimensions. Compared to other vertical concepts, this layout has reduced gate to source/drain overlap capacitances which is necessary for high speed applications. The use of SEG instead of blanket epitaxy avoids the deterioration of the Si/SiO2 interface due to reactive ion etching (RIE) and reduces punch-through due to facet growth. First non-optimized p-channel MOSFETs with a 12-nm gate oxide show a transconductance of 90 mS/mm. The cut-off frequencies of this device turned out to be f T = 2.3 GHz and f max = 1.1 GHz. [less ▲]

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See detailColor-Sensitive Photodetector Based on Porous Silicon Superlattices
Krüger, M.; Marso, Michel UL; Berger, M. G. et al

in Thin Solid Films (1997), 297(1997), 241-244

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