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See detailElectrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate
Mikulics, Martin; Fox, Alfred; Marso, Michel UL et al

in Vacuum (2012), 86(6), 754-756

Performance of AlGaN/GaN heterostructure field-effect transistors (HFETs) with recessed gate was investigated and compared with non-recessed counterparts. Optimal dry etch conditions by plasma assisted Ar ... [more ▼]

Performance of AlGaN/GaN heterostructure field-effect transistors (HFETs) with recessed gate was investigated and compared with non-recessed counterparts. Optimal dry etch conditions by plasma assisted Ar sputtering were found for ~6 nm gate recess of a 20 nm thick AlGaN barrier layer. A decrease of the residual strain after the gate recessing (from -0.9 GPa to -0.68 GPa) was evaluated from the photoluminescence measurement. The saturation drain current at the gate voltage VG = 1 V decreased from 1.05 A/mm to 0.85 A/mm after the recessing. The gate voltage for a maximal transconductance (240-250 mS/mm) has shifted from -3 V for non-recessed HFETs to -0.2 V for recessed counterparts. Similarly, the threshold voltage increased after the gate recessing. A decrease of the sheet charge density from 1 x 10 13 cm-2 to4 x 10 12 cm-2 at VG = 0 V has been evaluated from the capacitance measurements. The RF measurements yielded a slight increase of the cut-off frequencies after the gate recessing. All these indicate that the gate recessing is a useful tool to optimize the AlGaN/GaN HFET performance for high-frequency applications as well as for the preparation of normally-off devices. [less ▲]

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See detailMulti-electron dynamics for neutralization of highly charged ions near surfaces
Burgdorfer, J.; Wirtz, Ludger UL; Reinhold, C. O. et al

in Vacuum (2004), 73(1), 3-7

We present a simulation of the neutralization of highly charged ions in front of a lithium fluoride surface including the close-collision regime above the surface. The present approach employs a Monte ... [more ▼]

We present a simulation of the neutralization of highly charged ions in front of a lithium fluoride surface including the close-collision regime above the surface. The present approach employs a Monte-Carlo solution of the Liouville master equation for the joint probability density of the ionic motion and the electronic population of the projectile and the target surface. It includes single as well as double particle-hole (de)excitation processes and incorporates electron correlation effects through the conditional dynamics of population strings. For slow projectiles and normal incidence, the ionic motion depends sensitively on the interplay between image acceleration towards the surface and repulsion by an ensemble of positive hole charges in the surface ("trampoline effect"). For Ne10+ we find that image acceleration is dominant and no collective backscattering high above the surface takes place. (C) 2004 Elsevier Ltd. All rights reserved. [less ▲]

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