References of "van der Hart, A"
     in
Bookmark and Share    
Full Text
Peer Reviewed
See detailTraveling-wave photomixer with recessed interdigitated contacts on low-temperature-grown GaAs
Mikulics, M.; Michael, E. A.; Schieder, R. et al

in Applied Physics Letters (2006), 88(4), 0411181-0411183

We have fabricated and characterized novel traveling-wave photomixers with recessed interdigitated metal-semiconductor-metal MSM contacts based on low-temperature-grown GaAs. The new recessed MSM geometry ... [more ▼]

We have fabricated and characterized novel traveling-wave photomixers with recessed interdigitated metal-semiconductor-metal MSM contacts based on low-temperature-grown GaAs. The new recessed MSM geometry led to an improved electric-field distribution inside the photomixer structure and resulted in an up-to-100% increase in the output power of continuously operated devices, compared to conventional MSM devices with standard surface electrodes fabricated on an identical material. The recessed electrode structure also resulted in lower saturation of output power at higher input powers, enabling it to take advantage of higher input powers. [less ▲]

Detailed reference viewed: 50 (0 UL)
Full Text
Peer Reviewed
See detailTraveling-wave photomixers fabricated on high energy nitrogen-ion-implanted GaAs
Mikulics, M.; Michael, E. A.; Marso, Michel UL et al

in Applied Physics Letters (2006), 89(7), 071103

The authors report on fabrication and measurement of traveling-wave photomixers based on high energy and low dose nitrogen-ion-implanted GaAs. They used 3 MeV energy to implant N+ ions into GaAs ... [more ▼]

The authors report on fabrication and measurement of traveling-wave photomixers based on high energy and low dose nitrogen-ion-implanted GaAs. They used 3 MeV energy to implant N+ ions into GaAs substrates with an ion concentration dose of 3 1012 cm−2. The N+-implanted GaAs photomixers exhibit improvements in the output power in comparison with their counterparts, photomixers fabricated on low-temperature-grown GaAs. The maximal output power was 2.64 W at 850 GHz. No saturation of the output power with increased bias voltage and optical input power was observed. These characteristics make N+-implanted GaAs the material of choice for efficient high power sources of terahertz radiation. [less ▲]

Detailed reference viewed: 26 (0 UL)
Full Text
Peer Reviewed
See detailUltrafast and Highly-Sensitive Photodetectors with Recessed Electrodes Fabricated on Low-Temperature-Grown GaAs
Mikulics, M.; Wu, S.; Marso, Michel UL et al

in IEEE Photonics Technology Letters (2006), 18 (2006)(5-6), 820-822

We have fabricated and characterized ultrafast metal–semiconductor–metal (MSM) photodetectors with recessed electrodes, based on low-temperature-grown GaAs. The new recessed-electrode MSM geometry led to ... [more ▼]

We have fabricated and characterized ultrafast metal–semiconductor–metal (MSM) photodetectors with recessed electrodes, based on low-temperature-grown GaAs. The new recessed-electrode MSM geometry led to an improved electric-field distribution inside the photodetector structure and resulted in a 25% breakdown voltage and sensitivity increase with simultaneous four-fold reduction of capacitance, as compared to the identical MSM devices with planar electrodes. Time-resolved studies performed using 100-fs-duration laser pulses showed that recessed-electrode MSMs exhibited 1.0-ps-wide photoresponse transients with no slow after-pulse tails and their photoresponse time was 0.9 ps. The improved transient photoresponse parameters are the main advantages of the recessed-electrode geometry. [less ▲]

Detailed reference viewed: 47 (0 UL)
See detailGeneration of 1 THz radiation by photomixing in low-temperature-grown MBE GaAs
Mikulics, M.; Camara, I.; Marso, Michel UL et al

in Proc. 5th Intern. Conf. Advanced Semicon. Dev. & Microsystems ASDAM’04 (2004)

Detailed reference viewed: 41 (0 UL)