References of "Winter, H. P"
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See detailKinetically assisted potential sputtering of insulators by highly charged ions
Hayderer, G.; Cernusca, S.; Schmid, M. et al

in Physical Review Letters (2001), 86(16), 3530-3533

A new form of potential sputtering has been found for impact of slow (less than or equal to 1500 eV) multiply charged Xe ions (charge states up to q = 25) on MgOx. In contrast to alkali-halide or SiO2 ... [more ▼]

A new form of potential sputtering has been found for impact of slow (less than or equal to 1500 eV) multiply charged Xe ions (charge states up to q = 25) on MgOx. In contrast to alkali-halide or SiO2 surfaces this mechanism requires the simultaneous presence of electronic excitation of the target material and of a kinetically formed collision cascade within the target in order to initiate the sputtering process. This kinetically assisted potential sputtering mechanism has been identified to be present for ether insulating surfaces as well. [less ▲]

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See detailObservation of a threshold in potential sputtering of LiF surfaces
Hayderer, G.; Lemell, C.; Wirtz, Ludger UL et al

in Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms (2000), 164

A quartz-crystal microbalance technique is used for measuring total sputtering yields for LiF under impact of slow (20 eV, 100 eV, 500 eV and 1000 eV kinetic energy) singly and doubly charged ions. At low ... [more ▼]

A quartz-crystal microbalance technique is used for measuring total sputtering yields for LiF under impact of slow (20 eV, 100 eV, 500 eV and 1000 eV kinetic energy) singly and doubly charged ions. At low kinetic energies (less than or equal to 100 eV) potential sputtering (PS) (i.e., sputtering due to the projectiles potential energy) clearly dominates over kinetically induced sputtering. New insight into the mechanisms for PS is gained by determining the minimum potential energy necessary to induce PS. The measured potential energy threshold at around 10 eV provides evidence that PS can already be induced by the production of cold holes in the valence band of LiF via resonant neutralisation. (C) 2000 Elsevier Science B.V. All rights reserved. [less ▲]

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See detailThreshold for potential sputtering of LiF
Hayderer, G.; Schmid, M.; Varga, P. et al

in Physical Review Letters (1999), 83(19), 3948-3951

We have measured total sputtering yields for impact of slow (less than or equal to 100 eV) singly and doubly charged ions on LiF. The minimum potential energy necessary to induce potential sputtering (PS ... [more ▼]

We have measured total sputtering yields for impact of slow (less than or equal to 100 eV) singly and doubly charged ions on LiF. The minimum potential energy necessary to induce potential sputtering (PS) from UF was determined to be about 10 eV. This threshold coincides with the energy necessary to produce a cold hole in the valence band of LiF by resonant neutralization. This allows the first unambiguous identification of PS induced by cold holes. Further stepwise increase of the sputtering yield with higher projectile potential energies provides evidence for additional defect-mediated sputtering mechanisms operative in alkali halides. [less ▲]

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