References of "Winden, Andreas"
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See detailNano-light-emitting-diodes based on InGaN mesoscopic structures for energy saving optoelectronics
Mikulics, Martin; Winden, Andreas; Marso, Michel UL et al

in Applied Physics Letters (2016), 109

Vertically integrated III-nitride based nano-LEDs (light emitting diodes) were designed and fabricated for operation in the telecommunication wavelength range in the (p-GaN/InGaN/n-GaN/sapphire) material ... [more ▼]

Vertically integrated III-nitride based nano-LEDs (light emitting diodes) were designed and fabricated for operation in the telecommunication wavelength range in the (p-GaN/InGaN/n-GaN/sapphire) material system. The band edge luminescence energy of the nano-LEDs could be engineered by tuning the composition and size of the InGaN mesoscopic structures. Narrow band edge photoluminescence and electroluminescence were observed. Our mesoscopic InGaN structures (depending on diameter) feature a very low power consumption in the range between 2 nWand 30 nW. The suitability of the technological process for the long-term operation of LEDs is demonstrated by reliability measurements. The optical and electrical characterization presented show strong potential for future low energy consumption optoelectronics. [less ▲]

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See detailDirect electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes
Mikulics, Martin; Arango, Y.C.; Winden, Andreas et al

in Applied Physics Letters (2016), 108

We propose a device concept for a hybrid nanocrystal/III-nitride based nano-LED. Our approach is based on the direct electro-optical pumping of nanocrystals (secondary excitation) by electrically driven ... [more ▼]

We propose a device concept for a hybrid nanocrystal/III-nitride based nano-LED. Our approach is based on the direct electro-optical pumping of nanocrystals (secondary excitation) by electrically driven InGaN/GaN nano-LEDs as the primary excitation source. To this end, a universal hybrid optoelectronic platform was developed for a large range of optically active nano- and mesoscopic structures. The advantage of the approach is that the emission of the nanocrystals can be electrically induced without the need of contacting them. The proof of principal was demonstrated for the electro-optical pumping of CdSe nanocrystals. The nano-LEDs with a diameter of 100 nm exhibit a very low current of 8 nA at 5V bias which is several orders of magnitude smaller than for those conventionally used. The leakage currents in the device layout were typically in the range of 8 pA to 20 pA/cm2 at 5V bias. The photon-photon down conversion efficiency was determined to be 27%. Microphotoluminescence and microelectroluminescence characterization demonstrate the potential for future optoelectronics and highly secure “green” information technology applications. [less ▲]

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See detailIII-nitride nano-LEDs for single photon lithography
Trellenkamp, Stefan; Mikulics, Martin; Winden, Andreas et al

in Conference Proceedings The 10th International Conference on Advanced Semiconductor devices and Microsystems (2014, October)

We fabricated and tested III-nitride (p-GaN/MQW/n-GaN/sapphire) based nano-LEDs designed for operation in the single photon lithography technique. The band edge luminescence energy of the III-nitride nano ... [more ▼]

We fabricated and tested III-nitride (p-GaN/MQW/n-GaN/sapphire) based nano-LEDs designed for operation in the single photon lithography technique. The band edge luminescence energy of the III-nitride nano-LEDs depends linearly on the structure size. Our studies provide clear evidence that our technological process for the vertically integrated nano-LED emitters is perfectly suited for long term operation without any indication of degradation effects. This novel technology shows strong potential for a future flexible single photon lithography [1] which is applicable for molecular photonic and electronic circuits. [less ▲]

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See detailInGaN nano-LEDs for energy saving optoelectronics
Marso, Michel UL; Mikulics, Martin; Winden, Andreas et al

in Conference Proceedings The 10th International Conference on Advanced Semiconductor devices and Microsystems (2014, October)

Vertically integrated III-nitride nano-LEDs designed for operation in the telecommunication-wavelength range were fabricated and tested in the (p- GaN/InGaN/n-GaN/sapphire) material system. We found that ... [more ▼]

Vertically integrated III-nitride nano-LEDs designed for operation in the telecommunication-wavelength range were fabricated and tested in the (p- GaN/InGaN/n-GaN/sapphire) material system. We found that the band edge luminescence energy of the nano-LEDs could be engineered by their size and by the strain interaction with the masked SiO2/GaN substrates; it depends linearly on the structure size. The results of reliability measurements prove that our technological process is perfectly suited for long-term operation of the LEDs without any indication of degradation effects. The presented technology shows strong potential for future low energy consumption optoelectronics. [less ▲]

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See detailHighly Transparent Conducting Polymer Top Contacts for Future III–Nitride Based Single Photon Emitters
Riess, Sally; Mikulics, Martin; Winden, Andreas et al

in Japanese Journal of Applied Physics (2013), 52

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See detailResidual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements
Mikulics, Martin; Hardtdegen, Hilde; Winden, Andreas et al

in Physica Status Solidi C. Current Topics in Solid State Physics (2012), 9(3-4), 911-914

The residual strain in AlGaN/GaN heterostructure field-effect transistors (HFETs) with recessed gates and their non-recessed counterparts were investigated by micro photoluminescence measurements (μ-PL ... [more ▼]

The residual strain in AlGaN/GaN heterostructure field-effect transistors (HFETs) with recessed gates and their non-recessed counterparts were investigated by micro photoluminescence measurements (μ-PL). It is found that strain relaxation accounts for the observed sheet carrier density reduction after gate recessing. The usefulness of the method for device processing optimization is demonstrated. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. [less ▲]

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See detailGaAs nanowhiskers for femtosecond photodetectors and THz emitters
Mikulics, Martin; Zhang, J.; Sobolewski, Roman et al

in ASDAM 2012, The Ninth International Conference on Advanced Semiconductor Devices and Microsystems (2012)

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See detailTowards future III-nitride based THz OEICs in the UV range
Fox, Alfred; Mikulics, Martin; Winden, Andreas et al

in ASDAM 2012, The Ninth International Conference on Advanced Semiconductor Devices and Microsystems (2012)

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See detailTuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control
Trellenkamp, Stefan; Mikulics, Martin; Winden, Andreas et al

in ASDAM 2012, The Ninth International Conference on Advanced Semiconductor Devices and Microsystems (2012)

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