References of "Siebentritt, Susanne 50003089"
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See detailQuasi-Fermi-Level Splitting of Cu-Poor and Cu-Rich CuInS2 Absorber Layers
Lomuscio, Alberto UL; Rödel, Tobias UL; Schwarz, Torsten et al

in Physical Review Applied (2019), 11

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See detailChallenge in Cu-rich CuInSe2 thin film solar cells: Defect caused by etching
Elanzeery, Hossam UL; Melchiorre, Michele UL; Sood, Mohit UL et al

in Physical Review Materials (2019), 3

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See detailVariable chemical decoration of extended defects in Cu-poor Cu2ZnSnSe4 thin films
Schwarz, Torsten; Redinger, Alex UL; Siebentritt, Susanne UL et al

in Physical Review Materials (2019), 3

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See detailThe hunt for the third acceptor in CuInSe2 and Cu(In,Ga)Se2 absorber layers
Babbe, Finn UL; Elanzeery, Hossam UL; Wolter, Max UL et al

in Journal of Physics: Condensed Matter (2019), 31

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See detailTime-resolved photoluminescence on double graded Cu(In,Ga)Se2 – Impact of front surface recombination and its temperature dependence
Weiss, Thomas UL; Carron, Romain; Wolter, Max UL et al

in Science and Technology of Advanced Materials (2019), 20

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See detailHigh‐performance low bandgap thin film solar cells for tandem applications
Elanzeery, Hossam UL; Babbe, Finn UL; Melchiorre, Michele UL et al

in Progress in Photovoltaics (2018)

Thin film tandem solar cells provide a promising approach to achieve high efficiencies. These tandem cells require at least a bottom low bandgap and an upper high bandgap solar cell. In this contribution ... [more ▼]

Thin film tandem solar cells provide a promising approach to achieve high efficiencies. These tandem cells require at least a bottom low bandgap and an upper high bandgap solar cell. In this contribution, 2 high‐performance Cu(In,Ga)Se2 cells with bandgaps as low as 1.04 and 1.07 eV are presented. These cells have shown certified efficiencies of 15.7% and 16.6% respectively. Measuring these cells under a 780‐nm longpass filter, corresponding to the bandgap of a typical top cell in tandem applications (1.57 eV), they achieved efficiencies of 7.9% and 8.3%. Admittance measurements showed no recombination active deep defects. One additional high‐performance CuInSe2 thin film solar cell with bandgap of 0.95 eV and efficiency of 14.1% is presented. All 3 cells have the potential to be integrated as bottom low bandgap cells in thin film tandem applications achieving efficiencies around 24% stacked with an efficient high bandgap top cell. [less ▲]

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See detailSodium enhances indium-gallium interdiffusion in copper indium gallium diselenide photovoltaic absorbers
Colombara, Diego UL; Werner, Florian UL; Schwarz, Torsten et al

in Nature Communications (2018)

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See detailThe Optical Diode Ideality Factor Enables Fast Screening of Semiconductors for Solar Cells
Babbe, Finn UL; Choubrac, Leo; Siebentritt, Susanne UL

in Solar RRL (2018), 1800248

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See detailInfluence of Sodium and Rubidium Postdeposition Treatment on the Quasi-Fermi Level Splitting of Cu(In,Ga)Se2 Thin Films
Wolter, Max UL; Bissig, Benjamin; Avancini, Enrico et al

in IEEE Journal of Photovoltaics (2018)

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See detailInterdiffusion and Doping Gradients at the Buffer/Absorber Interface in Thin-Film Solar Cells
Werner, Florian UL; Babbe, Finn UL; Burkhart, Jan UL et al

in ACS Applied Materials and Interfaces (2018), 10

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See detailAbsorption Coefficient of a Semiconductor Thin Film from Photoluminescence
Rey, Germain UL; Spindler, Conrad UL; Rachad, Wafae UL et al

in Physical Review Applied (2018), 9

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See detailA Novel Fast Process for Zn(O,S) Buffer Layers, Doped With Al and B and Deposited on CIGSSe Solar Cells
Hönes, C.; Hackenberg, J.; Keller, R. et al

in IEEE Journal of Photovoltaics (2017), 7

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See detailOn the origin of band-tails in kesterite
Rey, Germain UL; Larramona, G.; Bourdais, S. et al

in Solar Energy Materials and Solar Cells (2017)

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See detailHigh voltage, please !
Siebentritt, Susanne UL

in Nature Energy (2017), 2

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See detailBetter Cu(In,Ga)Se2 solar cells based on surface treated stoichiometric absorbers
Choubrac, Léo UL; Bertram, Tobias UL; Elanzeery, Hossam UL et al

in Physica Status Solidi A. Applications and Materials Science (2017), 214, No. 1

Detailed reference viewed: 302 (20 UL)