References of "Rey, Germain 50002932"
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See detailAbsorption Coefficient of a Semiconductor Thin Film from Photoluminescence
Rey, Germain UL; Spindler, Conrad UL; Rachad, Wafae UL et al

in Physical Review Applied (2018), 9

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See detailSodium enhances indium-gallium interdiffusion in copper indium gallium diselenide photovoltaic absorbers
Colombara, Diego UL; Werner, Florian UL; Schwarz, Torsten et al

in Nature Communications (2018)

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See detailOn the origin of band-tails in kesterite
Rey, Germain UL; Larramona, G.; Bourdais, S. et al

in Solar Energy Materials and Solar Cells (2017)

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See detailOptical properties of Cu2ZnSnSe4 thin films and identification of secondary phases by spectroscopic ellipsometry
Demircioglu, Ozden; Salas, Jose Fabio Lopez; Rey, Germain UL et al

in OPTICS EXPRESS (2017), 25(5), 5327-5340

We apply spectroscopic ellipsometry (SE) to identify secondary phases in Cu2ZnSnSe4 (CZTSe) absorbers and to investigate the optical properties of CZTSe. A detailed optical model is used to extract the ... [more ▼]

We apply spectroscopic ellipsometry (SE) to identify secondary phases in Cu2ZnSnSe4 (CZTSe) absorbers and to investigate the optical properties of CZTSe. A detailed optical model is used to extract the optical parameters, such as refractive index and extinction coefficient in order to extrapolate the band gap values of CZTSe samples, and to obtain information about the presence of secondary phases at the front and back sides of the samples. We show that SE can be used as a non-destructive method for detection of the secondary phases ZnSe and MoSe2 and to extrapolate the band gap values of CZTSe phase. (C) 2017 Optical Society of America [less ▲]

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See detailImproved environmental stability of highly conductive nominally undoped ZnO layers suitable for n-type windows in thin film solar cells
Hala, Matej UL; Kato, H.; Algasinger, M. et al

in Solar Energy Materials & Solar Cells (2017), 161

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See detailPost-deposition treatment of Cu2ZnSnSe4 with alkalis
Rey, Germain UL; Babbe, Finn UL; Weiss, Thomas UL et al

in Thin Solid Films (2016), 633

Low temperature post-deposition treatment of Cu2ZnSnSe4 with NaF and KF significantly improved the solar cell efficiency (from 6.4% to 7.8% and 7.7% on average, respectively) due to enhanced fill factor ... [more ▼]

Low temperature post-deposition treatment of Cu2ZnSnSe4 with NaF and KF significantly improved the solar cell efficiency (from 6.4% to 7.8% and 7.7% on average, respectively) due to enhanced fill factor (from 0.58 to 0.61 and 0.62), open-circuit voltage (Voc) (from 314 mV to 337 mV and 325 mV) and short-circuit current density (from 35.3 mA⋅cm −2 to 38.3 mA⋅cm −2 and 38.6 mA⋅cm −2). Voc improvement was higher for solar cells with NaF treatment due to an increase in radiative efficiency at room temperature and shallower defect activation energy as determined by photoluminescence (PL) and temperature dependent admittance spectroscopy, respectively. In the case of KF treatment, red-shift of the PL, higher band tail density of state and donor activation energy deeper in the band gap were limiting further improvement of the Voc compared to NaF treatment. [less ▲]

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See detailImpact of annealing on electrical properties of Cu2ZnSnSe4 absorber layers
Weiss, Thomas UL; Redinger, Alex UL; Rey, Germain UL et al

in Journal of Applied Physics (2016), 120

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See detailOrdering kesterite improves solar cells:A low temperature post-deposition annealing study
Rey, Germain UL; Weiss, Thomas UL; Sendler, Jan UL et al

in Solar Energy Materials & Solar Cells (2016), 151

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See detailEnvironmental stability of highly conductive nominally undoped ZnO layers
Hala, Matej UL; Inoue, Yukari; Kato, Iroki et al

in IEEE Photovoltaic Specialists Conference. Conference Record (2016), 978-1-5090-2724

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See detailIs the Cu/Zn disorder the main culprit for the voltage deficit in kesterite solar cells?
Bourdais S.; Choné C.; Delatouche B. et al

in Advanced Energy Materials (2016), 6 - 15002276

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See detailWhat is the band gap of kesterite?
Siebentritt, Susanne UL; Rey, Germain UL; Finger, Ashley UL et al

in Solar Energy Materials & Solar Cells (2015)

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See detailHighly conductive ZnO films with high near infrared transparency
Hala, Matej UL; Fujii, Shohei; Redinger, Alex UL et al

in Progress in Photovoltaics: Research and Applications (2015)

We present an approach for deposition of highly conductive nominally undoped ZnO films that are suitable for the n-type window of low band gap solar cells. We demonstrate that low-voltage radio frequency ... [more ▼]

We present an approach for deposition of highly conductive nominally undoped ZnO films that are suitable for the n-type window of low band gap solar cells. We demonstrate that low-voltage radio frequency (RF) biasing of growing ZnO films during their deposition by non-reactive sputtering makes them as conductive as when doped by aluminium (ρ≤1·10−3Ω cm). The films prepared with additional RF biasing possess lower free-carrier concentration and higher free-carrier mobility than Al-doped ZnO (AZO) films of the same resistivity, which results in a substantially higher transparency in the near infrared region (NIR). Furthermore, these films exhibit good ambient stability and lower high-temperature stability than the AZO films of the same thickness. We also present the characteristics of Cu(InGa)Se2, CuInSe2 and Cu2ZnSnSe4-based solar cells prepared with the transparent window bilayer formed of the isolating and conductive ZnO films and compare them to their counterparts with a standard ZnO/AZO bilayer. We show that the solar cells with nominally undoped ZnO as their transparent conductive oxide layer exhibit an improved quantum efficiency for λ > 900 nm, which leads to a higher short circuit current density JSC. This aspect is specifically beneficial in preparation of the Cu2ZnSnSe4 solar cells with band gap down to 0.85 eV; our champion device reached a JSC of nearly 39 mAcm−2, an open circuit voltage of 378 mV, and a power conversion efficiency of 8.4 %. [less ▲]

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See detailDetection of a MoSe2 secondary phase layer in CZTSe by spectroscopic ellipsometry
Demircio glu, Ozden; Mousel, Marina UL; Redinger, Alex UL et al

in JOURNAL OF APPLIED PHYSICS (2015), 118

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See detailDiffuse Electroreflectance of thin-film solar cells: Suppression of interference-related lineshape distortions
Krämmer, Christoph; Huber, Christian; Redinger, Alex UL et al

in Applied Physics Letters (2015), 107

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See detailDifferent Bandgaps in Cu2ZnSnSe4: A High Temperature Coevaporation Study
Redinger, Alex UL; Sendler, Jan UL; Djemour, Rabie et al

in IEEE Journal of Photovoltaics (2015), 5(2), 641-648

We present a high-temperature Cu2ZnSnSe4 coevaporation study, where solar cells with a power conversion efficiency of 7.1 have been achieved. The process is monitored with laser light scattering in order ... [more ▼]

We present a high-temperature Cu2ZnSnSe4 coevaporation study, where solar cells with a power conversion efficiency of 7.1 have been achieved. The process is monitored with laser light scattering in order to follow the incorporation of the Sn into the film. We observe the segregation of ZnSe at the Mo/CZTSe interface. Optical analysis has been carried out with photoluminescence and spectrophotometry. We observe strong band tailing and a bandgap, which is significantly lower than in other reported efficient CZTSe absorbers. The photoluminescence at room temperature is lower than the bandgap due to the existence of a large quantity of tail states. Finally, we present effects of low-temperature postannealing of the absorbers on ordering of the Cu/Zn atoms in CZTSe and solar cell parameters. We observe strong changes in all solar cell parameters upon annealing. The efficiency of the annealed devices is significantly reduced, although ordering is improved compared with ones made from nonannealed absorbers. [less ▲]

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See detailThe band gap of Cu2ZnSnSe4: Effect of order-disorder
Rey, Germain UL; Redinger, Alex UL; Sendler, Jan UL et al

in Applied Physics Letters (2014), 105

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See detailDifferent Bandgaps in Cu2ZnSnSe4 : a high temperature coevaporation study
Redinger, Alex UL; Sendler, Jan UL; Djemour, Rabie UL et al

in IEEE Journal of Photovoltaics (2014)

Detailed reference viewed: 103 (7 UL)