References of "Moers, Jürgen"
     in
Bookmark and Share    
Full Text
See detailIII-nitride nano-LEDs for single photon lithography
Trellenkamp, Stefan; Mikulics, Martin; Winden, Andreas et al

in Conference Proceedings The 10th International Conference on Advanced Semiconductor devices and Microsystems (2014, October)

We fabricated and tested III-nitride (p-GaN/MQW/n-GaN/sapphire) based nano-LEDs designed for operation in the single photon lithography technique. The band edge luminescence energy of the III-nitride nano ... [more ▼]

We fabricated and tested III-nitride (p-GaN/MQW/n-GaN/sapphire) based nano-LEDs designed for operation in the single photon lithography technique. The band edge luminescence energy of the III-nitride nano-LEDs depends linearly on the structure size. Our studies provide clear evidence that our technological process for the vertically integrated nano-LED emitters is perfectly suited for long term operation without any indication of degradation effects. This novel technology shows strong potential for a future flexible single photon lithography [1] which is applicable for molecular photonic and electronic circuits. [less ▲]

Detailed reference viewed: 79 (0 UL)
Full Text
See detailTuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control
Trellenkamp, Stefan; Mikulics, Martin; Winden, Andreas et al

in ASDAM 2012, The Ninth International Conference on Advanced Semiconductor Devices and Microsystems (2012)

Detailed reference viewed: 70 (0 UL)