References of "Hollfelder, M"
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See detail0.1 µm T-gate Al-free InP/InGaAs/InP pHEMTs for W-Band Applications Using a Nitrogen Carrier for LP-MOCVD Growth
Schimpf, K.; Sommer, M.; Horstmann, M. et al

in IEEE Electron Device Letters (1997), 18

We report on the dc and RF performance of HEMT’s based on the Al-free material system InP/InGaAs/InP. These structures were grown by LP-MOCVD using a nitrogen carrier. The influence of gate length and ... [more ▼]

We report on the dc and RF performance of HEMT’s based on the Al-free material system InP/InGaAs/InP. These structures were grown by LP-MOCVD using a nitrogen carrier. The influence of gate length and channel composition on the performance of these devices is investigated.We demonstrate that optimum dc and RF performance using highly strained channels can be obtained only if additional composite channels are grown. The cutoff frequencies fT =160 GHz and fmax=260 GHz for a 0.1- um T-gate device indicate the suitability of our devices for W-Band applications. [less ▲]

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See detailSimple Realization of a Monolithic Integrated Photoreceiver for 10GBit/s Using an InP/InGaAs Heterostructure
Horstmann, M.; Hollfelder, M.; Schimpf, K. et al

in Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany (1996)

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See detail0.2µm T-gate InP/InGaAs/InP pHEMT with an InGaP Diffusion Barrier Layer Grown By LP-MOCVD Using an N2-carrier
Schimpf, K.; Hollfelder, M.; Horstmann, M. et al

in Proceedings of the 26th European Solid State Devices Research Conference, Bologna, Italy, 1996 (1996)

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See detailInP/GaInAs MSM Photodetector for Simple Integration in HEMT Circuits
Horstmann, M.; Marso, Michel UL; Schimpf, K. et al

Book published by Kluver Academic Publishers (1996)

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See detail0.2µm T-gate InP/InGaAs/InP pHEMT with InGaP Diffusion Barrier Layer Grown by LP-MOCVD using an N2-Carrier
Schimpf, K.; Hollfelder, M.; Horstmann, M. et al

in Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany (1996)

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See detailFrequency Response of InP/InGaAs MSM Photodetector with Current Transport Along 2DEG
Horstmann, M.; Hollfelder, M.; Muttersbach, J. et al

in Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany (1996)

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See detailNovel InP/GaInAs Photodetector for Integration in HEMT Circuits
Horstmann, M.; Marso, Michel UL; Schimpf, K. et al

in Proceedings of the 25th European Solid State Devices Research Conference, Den Haag, The Netherlands (1995)

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See detailNovel HEMT layout: The RoundHEMT
Marso, Michel UL; Schimpf, K.; Fox, A. et al

in Electronics Letters (1995), 31(1995), 589-591

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See detailInP/InGaAs Photodetector Based on a High Electron Mobility Transistor Layer Structure: Its Response at 1.3 µm wavelength
Horstmann, M.; Marso, Michel UL; Fox, A. et al

in Applied Physics Letters (1995), 67(1995), 106-108

We report on the investigation of the room-temperature optoelectronic behavior of a metal–semiconductor–metal two-dimensional electron gas photodiode based on the two-dimensional electron gas of a high ... [more ▼]

We report on the investigation of the room-temperature optoelectronic behavior of a metal–semiconductor–metal two-dimensional electron gas photodiode based on the two-dimensional electron gas of a high electron mobility transistor structure. The photodetector is fabricated in the InP/InGaAs material system, without use of Al-containing layers. Optoelectronic measurements on a device with a finger spacing of 3 mm show a full width at half-maximum (FWHM) of the pulse response of <60 ps, which is the resolution limit of our measurement equipment. Low-temperature measurements at 40 K with electro-optical sampling at a wavelength of 890 nm show a FWHM of 1 ps. [less ▲]

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See detailn-InGaAs Schottky Diode with Current Transport along 2DEG Channel
Kordoš, P.; Marso, Michel UL; Fox, A. et al

in Electronics Letters (1992), 28(1992), 1689-1690

Detailed reference viewed: 52 (0 UL)