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See detailNew approaches for growth control of GaN-based HEMT structure
Hardtdegen, H.; Steins, R.; Kaluza, N. et al

in Applied Physics A : Materials Science & Processing (2007), 87(3), 491-498

This paper reports on new approaches for growth control of GaN-based heterostructures for high frequency and high power application. First in situ methods are presented and their further development ... [more ▼]

This paper reports on new approaches for growth control of GaN-based heterostructures for high frequency and high power application. First in situ methods are presented and their further development discussed [1]. The development leads to a greatly improved observation of growth parameter influences in the MOVPE of GaN. A new growth process is introduced which enhances growth reproducibility [2]. This new growth process is then optimized with respect to the envisaged application. To this end process modeling will be employed. The application envisaged is the AlxGa1−xN/GaNhigh electron mobility transistor (HEMT). At last device results will be presented. All in all it will be shown how fundamental research can drive technology and how basic knowledge can be employed forprocess development with respect to device applications. [less ▲]

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See detailAlGaN/GaN Round-HEMTs on (111) silicon substrates
Javorka, P.; Alam, A.; Nastase, N. et al

in Electronics Letters (2001), 37(2001), 1364-1366

AlGaN/GaN Round-HEMTs on silicon substrates have been realised and their static characteristics investigated. The AlGaN/GaN (x = 0.23) material structures were grown on (111) p-Si by LP-MOVPE. Devices ... [more ▼]

AlGaN/GaN Round-HEMTs on silicon substrates have been realised and their static characteristics investigated. The AlGaN/GaN (x = 0.23) material structures were grown on (111) p-Si by LP-MOVPE. Devices with 0.3 mm gate length exhibit a saturation current of 0.82 A/mm, a good pinch-off and a peak extrinsic transconductance of 110 mS/mm. Highest saturation current reported so far and static output characteristics up to 20 V demonstrate that the devices are capable of handling 16 W/mm of static heat dissipation without any degradation of their performance. [less ▲]

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See detailAlGaN/GaN HEMT Optimization Using the RoundHEMT Technology
Marso, Michel UL; Javorka, P.; Alam, A. et al

in Physica Status Solidi A. Applied Research (2001), 188

The electrical characterization of epitaxially grown HEMT layer systems for device fabrication is commonly performed by Hall measurements. However, the ultimate characterization of a HEMT layer system is ... [more ▼]

The electrical characterization of epitaxially grown HEMT layer systems for device fabrication is commonly performed by Hall measurements. However, the ultimate characterization of a HEMT layer system is the transistor device itself. The RoundHEMT concept meets the need for a device technology with few fabrication steps that allows a fast feedback to epitaxy while providing an evaluation of important electrical and also processing data. Even though nearly identical Hall data on structures with different thickness and doping concentration of the AlGaN layers suggest similar device properties, the RoundHEMTs resolve remarkable differences in device performance. The best layer structure was used to fabricate HEMTs with IDS = 700 mA/mm, fT = 35 GHz, and fmax = 70 GHz for LG = 0.2 mm. [less ▲]

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See detailOptoelectronic D.C. and R.F. behavior of InP/InGaAs Based HEMTs
Marso, Michel UL; Horstmann, M.; Hardtdegen, H. et al

in Solid-State Electronics (1998), 42(1998), 197-200

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See detailPIN-PJBT Integration: A New GaAs Based Optoelectronic Receiver,
Dillmann, F.; Marso, Michel UL; Hardtdegen, H. et al

in Proceedings of the 28th European Solid State Devices Research Conference, Bordeaux, France, (1998)

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See detailDemonstration of Nitrogen Carrier Gas in MOVPE For InP/InGaAs-Based High Frequency and Optoelectronic Integrated Devices
Hardtdegen, H.; Marso, Michel UL; Horstmann, M. et al

in Proceedings of the 9th International Conference on InP and Related Materials, Hyannis, Massachusetts, USA (1997)

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See detailElectrical Behaviour of the InP/InGaAs Based MSM-2DEG Diode
Marso, Michel UL; Horstmann, M.; Hardtdegen, H. et al

in Solid-State Electronics (1997), 41(1997), 25-31

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See detailHigh Bandwidth InP/InGaAs Based MSM-2DEG Diodes For Optoelectronic Application,
Marso, Michel UL; Horstmann, M.; Schimpf, K. et al

in Proceedings of the 9th International Conference on InP and Related Materials (1997)

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See detailThermionic Field Emission in p-Barrier enhanced InP/InGaAs/InP HEMTs
Schimpf, K.; Horstmann, M.; Hardtdegen, H. et al

in Electronics Letters (1996), 32(1996), 2132-2133

A model for thermionic field emission in p-barrier enhanced InP HEMTs is presented indicating that a reduction in the gate leakage of those devices is related to an increase in effective barrier thickness ... [more ▼]

A model for thermionic field emission in p-barrier enhanced InP HEMTs is presented indicating that a reduction in the gate leakage of those devices is related to an increase in effective barrier thickness. Good agreement between this model and our experimental data is obtained. [less ▲]

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See detailInP/GaInAs MSM Photodetector for Simple Integration in HEMT Circuits
Horstmann, M.; Marso, Michel UL; Schimpf, K. et al

Book published by Kluver Academic Publishers (1996)

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See detail0.2µm T-gate InP/InGaAs/InP pHEMT with InGaP Diffusion Barrier Layer Grown by LP-MOCVD using an N2-Carrier
Schimpf, K.; Hollfelder, M.; Horstmann, M. et al

in Proceedings of the 8th International Conference on InP and Related Compounds, Schwäbisch Gmünd, Germany (1996)

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See detailInP-Based Monolithically Integrated Photoreceiver for 4-10Gbit/s Optoelectronic Systems
Horstmann, M.; Hardtdegen, H.; Schimpf, K. et al

in Proceedings of the Gallium Arsenide Application Symposium GAAS 96, Paris, France (1996)

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See detailInP/InGaAs Photodetector Based on a High Electron Mobility Transistor Layer Structure: Its Response at 1.3 µm wavelength
Horstmann, M.; Marso, Michel UL; Fox, A. et al

in Applied Physics Letters (1995), 67(1995), 106-108

We report on the investigation of the room-temperature optoelectronic behavior of a metal–semiconductor–metal two-dimensional electron gas photodiode based on the two-dimensional electron gas of a high ... [more ▼]

We report on the investigation of the room-temperature optoelectronic behavior of a metal–semiconductor–metal two-dimensional electron gas photodiode based on the two-dimensional electron gas of a high electron mobility transistor structure. The photodetector is fabricated in the InP/InGaAs material system, without use of Al-containing layers. Optoelectronic measurements on a device with a finger spacing of 3 mm show a full width at half-maximum (FWHM) of the pulse response of <60 ps, which is the resolution limit of our measurement equipment. Low-temperature measurements at 40 K with electro-optical sampling at a wavelength of 890 nm show a FWHM of 1 ps. [less ▲]

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See detailNovel HEMT layout: The RoundHEMT
Marso, Michel UL; Schimpf, K.; Fox, A. et al

in Electronics Letters (1995), 31(1995), 589-591

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See detailNovel InP/GaInAs Photodetector for Integration in HEMT Circuits
Horstmann, M.; Marso, Michel UL; Schimpf, K. et al

in Proceedings of the 25th European Solid State Devices Research Conference, Den Haag, The Netherlands (1995)

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See detailA Novel InP/InGaAs Photodetector Based on a 2DEG layer structure
Marso, Michel UL; Horstmann, M.; Rüders, F. et al

in Proceedings of the 6th International Conference on InP and Related Compounds, Santa Barbara, California USA (1994)

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See detailOptimization of Strained Ga1-xInxAs/InP Heterostructures Towards High Channel Conductivity for HEMT Application
Meyer, R.; Hardtdegen, H.; Leuther, A. et al

in Proceedings of the 5th International Conference on InP and Related Compounds, Paris, France (1993)

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See detailA Novel InGaAs Schottky-2DEG Diode
Marso, Michel UL; Kordoš, P.; Fox, A. et al

in Proceedings of the 5th International Conference on InP and Related Compounds, Paris, France (1993)

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