References of "Hala, Matej 50001927"
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See detailImproved environmental stability of highly conductive nominally undoped ZnO layers suitable for n-type windows in thin film solar cells
Hala, Matej UL; Kato, H.; Algasinger, M. et al

in Solar Energy Materials & Solar Cells (2017), 161

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See detailEnvironmental stability of highly conductive nominally undoped ZnO layers
Hala, Matej UL; Inoue, Yukari; Kato, Iroki et al

in IEEE Photovoltaic Specialists Conference. Conference Record (2016), 978-1-5090-2724

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See detailOrdering kesterite improves solar cells:A low temperature post-deposition annealing study
Rey, Germain UL; Weiss, Thomas UL; Sendler, Jan UL et al

in Solar Energy Materials & Solar Cells (2016), 151

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See detailHighly conductive ZnO films with high near infrared transparency
Hala, Matej UL; Fujii, Shohei; Redinger, Alex UL et al

in Progress in Photovoltaics: Research and Applications (2015)

We present an approach for deposition of highly conductive nominally undoped ZnO films that are suitable for the n-type window of low band gap solar cells. We demonstrate that low-voltage radio frequency ... [more ▼]

We present an approach for deposition of highly conductive nominally undoped ZnO films that are suitable for the n-type window of low band gap solar cells. We demonstrate that low-voltage radio frequency (RF) biasing of growing ZnO films during their deposition by non-reactive sputtering makes them as conductive as when doped by aluminium (ρ≤1·10−3Ω cm). The films prepared with additional RF biasing possess lower free-carrier concentration and higher free-carrier mobility than Al-doped ZnO (AZO) films of the same resistivity, which results in a substantially higher transparency in the near infrared region (NIR). Furthermore, these films exhibit good ambient stability and lower high-temperature stability than the AZO films of the same thickness. We also present the characteristics of Cu(InGa)Se2, CuInSe2 and Cu2ZnSnSe4-based solar cells prepared with the transparent window bilayer formed of the isolating and conductive ZnO films and compare them to their counterparts with a standard ZnO/AZO bilayer. We show that the solar cells with nominally undoped ZnO as their transparent conductive oxide layer exhibit an improved quantum efficiency for λ > 900 nm, which leads to a higher short circuit current density JSC. This aspect is specifically beneficial in preparation of the Cu2ZnSnSe4 solar cells with band gap down to 0.85 eV; our champion device reached a JSC of nearly 39 mAcm−2, an open circuit voltage of 378 mV, and a power conversion efficiency of 8.4 %. [less ▲]

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