References of "Grützmacher, D"
     in
Bookmark and Share    
Full Text
Peer Reviewed
See detailMonolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System
Mikulics, M.; Kordoš, P.; Gregušová, D. et al

in IEEE Photonics Technology Letters (2011), 23(17), 1189-1191

We have fabricated and characterized ultrafast metal–semiconductor–metal (MSM) photodetectors integrated with metal–semiconductor–field-effect-transistors (MESFETs) integrated in coplanar strip lines in ... [more ▼]

We have fabricated and characterized ultrafast metal–semiconductor–metal (MSM) photodetectors integrated with metal–semiconductor–field-effect-transistors (MESFETs) integrated in coplanar strip lines in the GaN/AlN/SiC material system. We recorded electrical transients of the single photodetector as short as 0.9 ps wide by optoelectric pump–probe measurements using 360-nm-wavelength and 100-fs-duration laser pulses. Electric photoresponse transients of the photodetector with 6-mV peak amplitude were amplified by the MESFET, resulting in 4-ps-wide and 35-mV peak amplitude signals. This monolithically integrated optoelectronic circuit is presented as a potential candidate for high-speed ultraviolet optoelectronics [less ▲]

Detailed reference viewed: 84 (0 UL)
Full Text
Peer Reviewed
See detailSensitivity enhancement of metal-semiconductor-metal photodetectors on low-temperature-grown GaAs using alloyed contacts
Mikulics, M. UL; Marso, Michel UL; Wu, S. et al

in IEEE Photonics Technology Letters (2008), 20(12), 1054-1056

We have fabricated and characterized metal–semiconductor–metal (MSM) photodetectors based on lowtemperature-grown GaAs with alloyed (i.e., ohmic-type) contacts. The annealed contacts optimize the electric ... [more ▼]

We have fabricated and characterized metal–semiconductor–metal (MSM) photodetectors based on lowtemperature-grown GaAs with alloyed (i.e., ohmic-type) contacts. The annealed contacts optimize the electric field distribution inside the photodetector structure which results in an up-to-200% responsivity increase of the devices, compared to conventional MSM detectors with standard nonalloyed (Schottky-type) metallization fabricated on identical material. The improved MSM device with alloyed contacts shows more than three times larger output amplitude at illumination with a 100-fs Ti : sapphire laser, compared to the nonalloyed devices, without degradation of detector speed. [less ▲]

Detailed reference viewed: 26 (0 UL)
Full Text
Peer Reviewed
See detailGaInAs Camel transistors With Current Gain Above 6 at Room Temperature
Marso, Michel UL; Zwinge, G.; Grützmacher, D. et al

in Electronics Letters (1991), 27(1991), 335-337

Detailed reference viewed: 24 (0 UL)