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See detailAn InAlAs-InGaAs OPFET with Responsivity Above 200 A/W at 1.3 µm Wavelength
Marso, Michel UL; Gersdorf, P.; Fox, A. et al

in IEEE Photonics Technology Letters (1999), 11

The optoelectronic dc and RF behavior of an InAlAs–InGaAs optically controlled field-effect transistor based on a high electron mobility transistor layer structure is investigated at 1.3- um wavelength ... [more ▼]

The optoelectronic dc and RF behavior of an InAlAs–InGaAs optically controlled field-effect transistor based on a high electron mobility transistor layer structure is investigated at 1.3- um wavelength light. The device is backside-illuminated to increase the responsivity. A transistor with 0.3-u m gate length and an active area of 50 x 50 u m2 exhibits a responsivity of 235 A/W, at 11- W incident optical power. The photoconductive response is higher than for an metal–semiconductor–metal photodetector with the same InGaAs absorption layer thickness up to 10 GHz. [less ▲]

Detailed reference viewed: 34 (0 UL)
See detailInvestigations on InAlAs/InGaAs OPFETs with different absorption layer thicknesses
Marso, Michel UL; Gersdorf, P.; Fox, A. et al

in Proceedings of the 6th International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO) (1998)

Detailed reference viewed: 17 (0 UL)